2014
DOI: 10.1016/j.apsusc.2014.04.027
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Structural and optical study of Li doped CuO thin films on Si (100) substrate deposited by pulsed laser deposition

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Cited by 119 publications
(37 citation statements)
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“…4(a), two small humps centered at 454 and 466 nm were observed, which corresponded to the blue emission in the visible region of CuO. The origin of this visible emission is usually attributed to oxygen vacancies and intrinsic defects [43]. For the CuO nanostructure prepared by calcination in the nitrogen atmosphere, similar PL spectra was obtained as shown in Fig.…”
Section: Microstructure Characterization Of the Grass-like Cuo Nanostmentioning
confidence: 56%
See 1 more Smart Citation
“…4(a), two small humps centered at 454 and 466 nm were observed, which corresponded to the blue emission in the visible region of CuO. The origin of this visible emission is usually attributed to oxygen vacancies and intrinsic defects [43]. For the CuO nanostructure prepared by calcination in the nitrogen atmosphere, similar PL spectra was obtained as shown in Fig.…”
Section: Microstructure Characterization Of the Grass-like Cuo Nanostmentioning
confidence: 56%
“…For the CuO nanostructures without calcination in the nitrogen atmosphere, the fitted peaks centered at 377 and 387 nm originated from the near-band-edge (NBE) UV emission. The origin of UV emission in CuO was mainly due to the recombination of electron-hole pairs in free-excitons [42,43]. The other two fitted emission peaks at 402 and 426 nm observed in the violet region belonged to CuO, which revealed the blue-shift behavior of the peak position in comparison with that of bulk CuO.…”
Section: Microstructure Characterization Of the Grass-like Cuo Nanostmentioning
confidence: 88%
“…CuO and doped CuO have become important materials in technological applications for high T C superconductors [6], hydration detection [7], nonenzymatic glucose sensing [8], gas sensors [9], lithium-ion batteries [10], magnetic storage media [11] and so on. As reported, optical property of semiconductors can be considerably altered by adding appropriate amount of dopants, which change the concentration of mobile charge carrier by many orders of magnitude [1]. In addition, introduced impurity levels and generated lattice defects can have a significant influence on photocatalytic performance of materials.…”
Section: Introductionmentioning
confidence: 97%
“…In recent yeas, doping process has been widely used to change the structure of CuO to realize novel or enhanced properties [1]. Many previous references have reported the improvement of characteristic properties in various materials by doping [2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, extensive studies have been investigated in transition element‐doped CuO to enhance the physical and chemical properties of materials. Previous works about doping of transition metal ions into CuO lattice have been reported such as Zn , In , Mn , Li , Fe , Ni . Among them, Mn is known as an excellent catalyst.…”
Section: Introductionmentioning
confidence: 99%