Structural and Optoelectronic Properties of β‐In₂S₃ Thin Films to be Applied on Cadmium Reduced Solar Cells

Abstract

In 2 S 3 thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In 2 S 3 as "standard buffer layer" in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In 2 S 3 physical properties is analyzed. Stable tetragonal β-In 2 S 3 phase was confirmed by X-ray diffraction. Electrical properties were determined by four-point probe technique obtaining a resistivity value of 10 2 Ω cm. CdTe solar cells performance was studied by measuring J-V characteristics and spectral quantum efficiencies. These results reveal In 2 S 3 thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300-500 nm).

Obtention of solar cell parameters, through convergence of iterative cycles. Part 1: Theoretical analysis and cycles proposal

“…These simulations were done on the [0 V, 1 V] range, using the same C program reported in [2] . Laboratory fabricated solar cells usually function in this voltage range [14] , [34] , [35] , [36] , [37] , [38] , [39] , [40] , [41] , [42] , [43] , [44] , [45] , [46] , [47] , [48] , [49] , [50] , [51] , [52] , [53] , [54] . Briefly, the C program solved equation 1 in [2] within an accuracy of 10 −15 A for each voltage.…”

“…For simplicity purposes and to facilitate comparison with the deduced solar parameters, all simulation parameters (except n ) were chosen as power of 10, i.e., the simulation parameters were , , mA and μA. Both and are three orders of magnitude larger than and , respectively, which is usually the case found in second generation solar cells [14] , [34] , [35] , [36] , [37] , [38] , [39] , [40] , [41] , [42] , [43] , [44] , [45] , [46] , [47] , [48] , [49] , [50] , [51] , [52] , [53] , [54] . The value of n was chosen , which is a value in the range of 2 to 3, which is also the usual case found in second generation solar cells [14] , [34] , [35] , [36] , [37] , [38] , [39] , [40] , [41] , [42] ,…”

“…Both and are three orders of magnitude larger than and , respectively, which is usually the case found in second generation solar cells [14] , [34] , [35] , [36] , [37] , [38] , [39] , [40] , [41] , [42] , [43] , [44] , [45] , [46] , [47] , [48] , [49] , [50] , [51] , [52] , [53] , [54] . The value of n was chosen , which is a value in the range of 2 to 3, which is also the usual case found in second generation solar cells [14] , [34] , [35] , [36] , [37] , [38] , [39] , [40] , [41] , [42] , [43] , [44] , [45] , [46] , [47] , [48] , [49] , [50] , [51] , [52] , [53] , [54] . Values of of 11, 21, 51 and 101 were tested, to obtain the optimal …”

Unraveling the Growth Mechanism Forming Stable γ-In2S3 and β-In2S3 Colloidal Nanoplatelets

“…30−35 It is anticipated that these 2D materials should possess a tunable electronic band structure, high conductivity, and efficient optical transitions. 36,37 Moreover, the unique defect cubic and defect spinel structures of the In 2 S 3 compound include voids, which can accommodate functional electrical or magnetic dopants, useful attribute for practical applications. Indeed, recent studies used Cu-or Mn-doped β-In 2 S 3 nanostructures in prototype solar cells and light-emitting diodes.…”

“…New efforts have been demonstrated in recent years for the development of In 2 S 3 two-dimensional (2D) nanostructures, for example, thin films or nanoplatelets (NPLs), using either chemical vapor deposition or colloidal chemical procedures. − It is anticipated that these 2D materials should possess a tunable electronic band structure, high conductivity, and efficient optical transitions. , Moreover, the unique defect cubic and defect spinel structures of the In 2 S 3 compound include voids, which can accommodate functional electrical or magnetic dopants, useful attribute for practical applications. Indeed, recent studies used Cu- or Mn-doped β-In 2 S 3 nanostructures in prototype solar cells and light-emitting diodes. − The structure of shape stability was discussed only in a single case, showing transformation of wrinkled nanostructures into nanodisk shapes .…”