In 2 S 3 thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In 2 S 3 as "standard buffer layer" in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In 2 S 3 physical properties is analyzed. Stable tetragonal β-In 2 S 3 phase was confirmed by X-ray diffraction. Electrical properties were determined by four-point probe technique obtaining a resistivity value of 10 2 Ω cm. CdTe solar cells performance was studied by measuring J-V characteristics and spectral quantum efficiencies. These results reveal In 2 S 3 thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300-500 nm).

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