Structural and Photoelectrochemical Evaluation of Nanotextured Sn‐Doped AgInS₂ Films Prepared by Spray Pyrolysis

Abstract

Spray pyrolysis was used to prepare films of AgInS(2) (AIS) with and without Sn as an extrinsic dopant. The photoelectrochemical performance of these films was evaluated after annealing under a N(2) or S atmosphere with different amounts of the Sn dopant. DFT was used to calculate the band structure of AIS and understand the role of Sn doping in the observed properties. All AIS films were n-type, and Sn was found to increase the photocurrent and carrier concentration of AIS with an optimum doping level of x=[Sn]/([Ag]+[In])=0.02, which gave a photocurrent of 4.85 mA cm(-2). Above this level, the Sn dopants were detrimental to the photoelectrochemical performance, likely a result of a self-compensating effect and the introduction of a deep acceptor level, which could act as a recombination site for photogenerated carriers.

Tin Incorporation in AgInSe2 Thin Films: Influence on Conductivity

“…A DFT calculation reported on Sn doped AgInS 2 film indicates that the dopant- [In]} < 0.125) whereas an increase in dopant percentage enhances the substitution of Sn at Ag-, In-, or S-sites. 17 It is noteworthy here also that the films change the conductivity type only when the incorporated Sn% (9−13%) is sufficiently high, so that the substitution effects are more probable. The conductivity types of the present films are confirmed through the thermopower analysis corroborated with the hot probe measurements.…”

“…Even though the p-AIS:Sn films are found to be slightly In-deficient, the possibility of Sn to occupy In-site could not be suggested as it will result in n-type conductivity which otherwise is not. A DFT calculation reported on Sn doped AgInS 2 film indicates that the dopant-formation energy for Sn to occupy the interstitial sites is more favorable at low % of Sn dopants (i.e., at x = [Sn]/{[Ag] + [In]} < 0.125) whereas an increase in dopant percentage enhances the substitution of Sn at Ag-, In-, or S-sites . It is noteworthy here also that the films change the conductivity type only when the incorporated Sn% (9–13%) is sufficiently high, so that the substitution effects are more probable.…”

“…Ag which acts as an active donor in the former and the occupation of sulfur (S) sites by Sn dopants leads to acceptor level formation in the latter, the n-and p-conductivity types of AIS:Sn can be explained. 10,17 Taking the lead from the above, it can be argued that Sn substitution on Ag site has led to donor levels and Sn on Se site has induced acceptor levels producing n-type and ptype AIS:Sn films, respectively. Even though the p-AIS:Sn films are found to be slightly In-deficient, the possibility of Sn to occupy In-site could not be suggested as it will result in n-type conductivity which otherwise is not.…”

Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

“…Melting point and band gap energy of AgInSe2 is better than CuInSe2 for solar cell applications [1] direct gap semiconductors [4] lies between 0.8 and 2.0 eV [5] the crystal structure of AIS is tetragonal structure chalcopyrite with the lattice constant a =b= 6.102 A° and c = 11.69 A° [6]. Several techniques used to manufacture AIS, such as co-evaporation [4], spray pyrolysis technique [5,7]. sol-gel spin-coating technique [6].…”

Preparation of AgInS2 quantum dot/In2S3 co-sensitized photoelectrodes by a facile aqueous-phase synthesis route and their photovoltaic performance

“…So far, most of the studies have focused on the synthesis strategies of AgInS 2 nanocrystals (NCs) for biological applications. [19][20][21][22][23] Several methods have been adopted to fabricate AgInS 2 thin films such as chemical spray pyrolysis, 24,25 physical vapor deposition, 26 and electrochemical deposition. 27 However these traditional preparation routes need harsh reaction conditions and the synthesized AgInS 2 films have a poor crystal structure.…”