Structural and photoluminescence properties of Al-doped ZnO films deposited on Si substrate

Ding, Jijun; Chen, H.X.; Ma, Shenglin

doi:10.1016/j.physe.2010.02.014

Cited by 28 publications

(14 citation statements)

References 23 publications

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“…Transparent Conductive Oxides (TCO) films play a significant role as an transparent electrode in the optoelectronic and photovoltaic devices, especially in thin films solar cells [1][2][3][4][5][6]. The most widely used TCO, both in research and industry, are Indium Tin Oxide (ITO) films, because they are characterized by a good electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Krawczak¹,

Zdyb²,

Gulkowski³

et al. 2017

E3S Web Conf.

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Abstract. Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

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Section: Introductionmentioning

confidence: 99%

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Krawczak¹,

Zdyb²,

Gulkowski³

et al. 2017

E3S Web Conf.

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“…Zinc oxide (ZnO) which is a versatile semiconductor material, has been attracting attention because of the commercial demand for optoelectronic devices operating at blue and ultraviolet regions [5] and it is a wurtzite-type semiconductor with band gap energy of 3.37 eV and very large excitation binding energy (60 meV) at room temperature [6]. Recently, special attention has been devoted to the morphology of ZnO having various nanostructures [7,8].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol–gel spin coating technique

Farag

Çavaş

Yakuphanoğlu

et al. 2011

Journal of Alloys and Compounds

132

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“…These values were calculated from measured capacitance and conductance values of at the accumulation region [21][22][23][24]. The plot shows a peak, wherein the peak position changes with increased frequency.…”

Section: Resultsmentioning

confidence: 99%

“…For the former the intersection of the resulting curve on the voltage axis is sufficient. For space charge density ( ) the slope of the plot can be fitted to the following relationship [16,[19][20][21][22][23][24]:…”

Section: Resultsmentioning

confidence: 99%

Electrical and Photoconductivity Properties of Al/CdFe₂O₄/p-Si/Al Photodiode

Çavaş

Yakuphanoğlu

Kaya

2016

Journal of Photonics

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In the present study, we have investigated the effects of illumination intensity on the optical and electrical characteristics of the Al/CdFe 2 O 4 /p-Si/Al photodiode. A thin film of CdFe 2 O 4 was fabricated using the sol-gel spin coating method that allows good thickness control and low-cost manufacturing as compared to alternative techniques. The current-voltage (I-V) of the Al/CdFe 2 O 4 /p-Si/Al photodiode was measured in the dark and under different illumination intensities. The photocurrent increased with higher luminous intensity and its sensitivity has a strong dependence on the reverse bias rising from 1.08 * 10 −7 A under dark conditions to 6.11 * 10 −4 A at 100 mW/cm 2 of illumination. The parameters of the photodiode such as ideality factor and barrier height were calculated using the thermionic emission model. The ideality factor of the Al/CdFe 2 O 4 /p-Si/Al photodiode was found to be 4.4. The barrier height was found to be 0.88 eV. The capacitance-voltage (C-V) characteristics measured at different frequencies have strongly varied with frequency, decreasing with frequency. Consequently, the resulting interface density ( it ) value of the Al/CdFe 2 O 4 /p-Si/Al photodiode also decreased with higher frequency. Similarly, the fitted series resistance of the Al/CdFe 2 O 4 /pSi/Al photodiode has declined with higher frequency.

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Structural and photoluminescence properties of Al-doped ZnO films deposited on Si substrate

Cited by 28 publications

References 23 publications

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol–gel spin coating technique

Electrical and Photoconductivity Properties of Al/CdFe₂O₄/p-Si/Al Photodiode

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Structural and photoluminescence properties of Al-doped ZnO films deposited on Si substrate

Cited by 28 publications

References 23 publications

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol–gel spin coating technique

Electrical and Photoconductivity Properties of Al/CdFe2O4/p-Si/Al Photodiode

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Electrical and Photoconductivity Properties of Al/CdFe₂O₄/p-Si/Al Photodiode