Structural and Photophysical Properties of Methylammonium Lead Tribromide (MAPbBr3) Single Crystals

Wang, Kai-Hung; Li, Liang Chen; Shellaiah, Muthaiah; Sun, Kien-Wen

doi:10.1038/s41598-017-13571-1

Cited by 193 publications

(184 citation statements)

References 56 publications

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“…Raman spectroscopy has been performed an excitation wavelength of 633 nm to avoid the fluorescence background (Figure C). The observed broad Raman bands below 200 cm −1 are attributed to a number of individual lattice vibrations, which cannot be spectrally resolved, but similar observations have been made in the literature . The low‐frequency band at 325 cm −1 is related to the restricted rotation of the MA + in MAPbBr 3 , in agreement with that of reported MAPbBr 3 .…”

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confidence: 85%

Investigation of Electrode Electrochemical Reactions in CH₃NH₃PbBr₃ Perovskite Single‐Crystal Field‐Effect Transistors

et al. 2019

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Metal halide perovskites, such as MAPbX 3 (X = Cl, Br, or I) have recently garnered tremendous research efforts for a broad range of photovoltaic and optoelectronic applications, [1][2][3][4][5][6][7] due to their favorable optical and electronic properties such as tunable bandgap, [2] high absorption coefficient, [3] and high photoluminescence quantum yield. [4] In particular, the power-conversion efficiencies of perovskite solar cells have been boosted to over 23% (certified) from a starting point of 3.8% over the past few years. [4][5][6][7][8] Apart from the rapid developments of materials and device architectures, a thorough understanding of fundamental physical processes including charge-carrier transport will be needed for further breakthroughs in device performance. However, a comprehensive physical picture of the intrinsic charge transport in the metal halide perovskites, which is key Optoelectronic devices based on metal halide perovskites, including solar cells and light-emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic-inorganic hybrid perovskite materials can enable high-performance, solution-processed field-effect transistors (FETs) for next-generation, low-cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single-crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source-drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such "ideal" interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom-contact, bottom-gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single-crystal FETs with high mobility of up to ≈15 cm 2 V −1 s −1 at 80 K. This work addresses one of the key challenges toward the realization of high-performance solution-processed perovskite FETs. Field-Effect Transistors

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confidence: 85%

Investigation of Electrode Electrochemical Reactions in CH₃NH₃PbBr₃ Perovskite Single‐Crystal Field‐Effect Transistors

et al. 2019

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“…The phase transition for MAPbBr 3 crystal occurs near 160 K which is also not the origin for a sharp decrease in rise time. [ 37–39 ] Combining the observation of voltage instability during detector operation (Figure 2 and Figure S1, Supporting Information) and the large temperature dependent rise time changes in Figure 3, we attribute the slow detector rise time to the ion migration induced charge trapping, which is greatly suppressed once the temperature is lowered.…”

Section: Resultsmentioning

confidence: 74%

Methylammonium Lead Tribromide Single Crystal Detectors towards Robust Gamma‐Ray Photon Sensing

Tisdale

Yoho

Tsai

et al. 2020

Advanced Optical Materials

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photo voltaics, perovskite solar cells have already exceeded 23% in power conversion efficiency in a short development period. [1][2][3][4] OMHPs have also become popular in many other optoelectronic applications, such as light-emitting diodes, [5,6] photodetectors, [7,8] and lasing applications. [9] Properties such as tunable band gaps, [10,11] low trap state densities, [12] and long carrier diffusion lengths make OMHPs a desirable material for a wide range of optoelectronic applications, as well as being a focus for other semiconducting device applications. [13,14] These fascinating optoelectronic properties have recently sparked a new interest for applications of OMHPs for high-energy radiation detectors, which are considered as a critical technology in many fields, including nuclear safeguards, nuclear forensics, and astrophysics. Notably, current solid-state detector technologies using classical semiconductors have many challenges that must be overcome for wide spread development. For example, Cadmium Zinc Telluride (CZT) is a commercial γ-ray detection semiconductor achieving reasonable resolution (≈2% at 662 keV) at room temperature. However, the complicated and costly high-quality crystal growth for this semiconductor fabrication prohibits its broad adaptation. Another example of a more cost-effective semiconductor is high purity Germanium, (HPGe) which achieves an impressive resolution, (≈0.2% at 662 keV) albeit under operation at liquid nitrogen temperatures. [15] Thus, achieving cost efficient, robust high resolution detection at ambient conditions has been a long-time aim for semiconductor γ-ray detectors. In this arena, lead-halide based perovskites have been proposed as a new generation semiconductors in γ -spectroscopy for its low-cost solution process and simple crystal growth for room temperature detectors. [16][17][18] The incorporation of high-Z elements (i.e., Pb) underscores the opportunity for enhanced photoelectric interaction probability. Large band gaps and high resistivities are also essential for highly sensitive operation in the resistive mode. [19] Moreover, the long carrier lifetime and decent ambipolar mobility give great potential for single photon counting and pulse mode radiation sensing. [15] Previous reports have shown promising proof-of-principle results for the application of perovskites as ionizing radiation In recent years, hybrid perovskite single crystalline solid-state detectors have shown promise in γ-ray spectroscopy. Here, the γ-ray photon induced electrical pulses are investigated, which are produced by perovskite solid-state detectors made with the commonly used methylammonium lead tribromide crystals with chlorine incorporation. Under low electric field detector operation, slow pulses generated by γ-rays with average rise times of 65 µs are observed, which decreases to 20 µs when a higher electrical field of 500 V cm −1 is applied. However, the baseline becomes noisy quickly, which prevents collection of clean pulses for spectra construction. Further, by systematic...

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“…To provide additional proof for the origin of the two peaks, the authors studied the intensity of the high energy excitonic peak when generating more orthorhombic phase in the crystal by reducing the temperature. A phase transition from cubic (C) to tetragonal (T) and finally orthorhombic (O) is known to take place in perovskites as the temperature decreases . Figure e shows the temperature dependent dielectric function.…”

Section: Photoluminescence Propertiesmentioning

confidence: 99%

Photophysics of Methylammonium Lead Tribromide Perovskite: Free Carriers, Excitons, and Sub‐Bandgap States

Δροσερός

Τσόκκου

Banerji

2020

Advanced Energy Materials

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Methylammonium lead tribromide perovskite, one of the first artificially synthesized perovskites, can be used in multijunction solar cells and for light‐emitting applications. Its structure leads to a wide direct bandgap, a high extinction coefficient for absorption, and an exciton binding energy that is higher than the thermal energy at room temperature. The broad range of studies performed on the optical phenomena in this material has revealed the contribution of free carriers, excitons, and defect states to its photoluminescence properties. The present report aims to highlight the role played by the different primary photoexcitations, by defects and a variety of optical phenomena (dual emission, reabsorption, photon‐recycling, Rashba‐splitting) on the observed excited‐state properties of this semiconductor. Focus is given to the manifestation of these properties in different spectroscopic measurements.

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Structural and Photophysical Properties of Methylammonium Lead Tribromide (MAPbBr3) Single Crystals

Cited by 193 publications

References 56 publications

Investigation of Electrode Electrochemical Reactions in CH₃NH₃PbBr₃ Perovskite Single‐Crystal Field‐Effect Transistors

Investigation of Electrode Electrochemical Reactions in CH₃NH₃PbBr₃ Perovskite Single‐Crystal Field‐Effect Transistors

Methylammonium Lead Tribromide Single Crystal Detectors towards Robust Gamma‐Ray Photon Sensing

Photophysics of Methylammonium Lead Tribromide Perovskite: Free Carriers, Excitons, and Sub‐Bandgap States

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Structural and Photophysical Properties of Methylammonium Lead Tribromide (MAPbBr3) Single Crystals

Cited by 193 publications

References 56 publications

Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors

Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors

Methylammonium Lead Tribromide Single Crystal Detectors towards Robust Gamma‐Ray Photon Sensing

Photophysics of Methylammonium Lead Tribromide Perovskite: Free Carriers, Excitons, and Sub‐Bandgap States

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Investigation of Electrode Electrochemical Reactions in CH₃NH₃PbBr₃ Perovskite Single‐Crystal Field‐Effect Transistors

Investigation of Electrode Electrochemical Reactions in CH₃NH₃PbBr₃ Perovskite Single‐Crystal Field‐Effect Transistors