Structural changes during annealing of GaInAsN

Kurtz, Sarah; Webb, Jennifer M.; Gedvilas, L. M.; Friedman, Daniel; Geisz, John F.; Olson, J. M.; King, Richard R.; Joslin, David; Karam, N.H.

doi:10.1063/1.1345819

Cited by 236 publications

(168 citation statements)

References 8 publications

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“…The formation of this In−N cluster reduces the strain in the alloy [21]. Therefore this could be a reason for the blue shift of PL peak position after annealing.…”

Section: Resultsmentioning

confidence: 99%

Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

Gholami

Esmaeili

Haratizadeh

et al. 2009

Opto-Electronics Review

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We have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.

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“…The formation of this In−N cluster reduces the strain in the alloy [21]. Therefore this could be a reason for the blue shift of PL peak position after annealing.…”

Section: Resultsmentioning

confidence: 99%

Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

Gholami

Esmaeili

Haratizadeh

et al. 2009

Opto-Electronics Review

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“…The In-concentration of the layers measured separately by X-ray microanalyses is 6.4%. Using Vegard's law the N-content in InGaAsN layers is determined to be 2.8% (Mintairov et al, 2001, Hashimoto et al, 2003 and for some MBE and MOCVD samples after annealing (Pavelescu et al,2005;Kurtz et al 2001). The experimentally observed local modes could be explained by theoretical analyses of the microscopic lattice structures related to the incorporation of N in InGaAsN alloys.…”

Section: Structural Characterizationmentioning

confidence: 92%

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

Milanova¹,

Vitanov²

2011

Solar Cells - New Aspects and Solutions

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“…The thermal annealing of In x Ga 1-x N y As 1-y epitaxial films at 670 C-700 C during 15-30 min is an efficient method to change the arrangement of In and nitrogen atoms over long distances. 15,16 B x In 1-x Bi y B V 1-y belong to the same type of alloy just as In x Ga 1-x N y As 1-y . That is why the temperature range from 0 C to 800 C was chosen for the calculations.…”

Section: Resultsmentioning

confidence: 99%

Weakly strained highly mismatched BxIn1-xBVyAs1-y (BV = Sb, Bi) alloys

Elyukhin

2018

Journal of Applied Physics

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Thermodynamically favorable 4B10BV (BV = Sb, Bi) clustering, reducing the internal strain energy, is presented in highly mismatched InAs-rich BxIn1-xBVyAs1-y alloys. The cluster formation decreases the sum of the internal energies of the constituent compounds and internal strain energy. The cohesive energies, enthalpies of formation, bond stretching, and bond bending elastic constants of zinc blende BBi and InBi are calculated. The clustering conditions are estimated up to 800 °C within the compositions 5 × 10−5 ≤ x ≤ 0.01 and x ≤ y ≤ 100x. The internal strain energies of BxIn1-xSbyAs1-y and BxIn1-xBiyAs1-y (y ≥ 2.5x) in which 99.99% boron atoms are in the clusters are more than three and seven times, respectively, less than in alloys without clusters. The formation conditions for such weakly strained highly mismatched alloys have been obtained. Almost all boron atoms should be in 4B10Sb and 4B10Bi clusters at 800 °C in BxIn1-xSbyAs1-y with x ≥ 4.2 × 10−4 and y ≥ 10x and in BxIn1-xBiyAs1-y with x ≥ 6.6 × 10−5 and y ≥ 10x.

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Structural changes during annealing of GaInAsN

Cited by 236 publications

References 8 publications

Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

Weakly strained highly mismatched BxIn1-xBVyAs1-y (BV = Sb, Bi) alloys

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