2015
DOI: 10.1021/acs.jpcc.5b04613
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Structural Changes in Tungsten and Tantalum Wires in Catalytic Chemical Vapor Deposition Using 1,3-Disilacyclobutane

Abstract: Metal wires (typically made of W or Ta) serve as catalysts to decompose the precursor gases to form reactive species in the technique of catalytic chemical vapor deposition. The reactions of these reactive species with the heated wire cause structure changes in the wire, which affects its catalytic properties and lifetime. Here, we report a systematic study on characterizing the structural changes in W and Ta wires when they are exposed to 1,3-disilacylobutane, a useful single-source precursor for SiC film dep… Show more

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Cited by 5 publications
(1 citation statement)
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“…W, one of the most widely used wire materials, can easily be carburized when exposed to organic material gases [1][2][3][4][5]. Silicidation is a problem when we use SiH 4 or organosilicon compounds, although the silicidation by SiH 4 is rather minor at high temperatures, i.e., over 1.810 3 K [3][4][5][6][7][8][9][10][11]. Metal contamination is another problem.…”
Section: Introductionmentioning
confidence: 99%
“…W, one of the most widely used wire materials, can easily be carburized when exposed to organic material gases [1][2][3][4][5]. Silicidation is a problem when we use SiH 4 or organosilicon compounds, although the silicidation by SiH 4 is rather minor at high temperatures, i.e., over 1.810 3 K [3][4][5][6][7][8][9][10][11]. Metal contamination is another problem.…”
Section: Introductionmentioning
confidence: 99%