Structural characterization and magnetic profile of annealed CoFeB∕MgO multilayers

Vadalá, M.; Zhernenkov, Kirill; Wolff, M.; Toperverg, B. P.; Westerholt, K.; Zabel, H.; Wiśniowski, P.; Cardoso, Susana; Freitas, P. P.

doi:10.1063/1.3139281

Cited by 15 publications

(10 citation statements)

References 15 publications

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“…Therefore, an annealing process is required to induce crystallization of the as-deposited amorphous CoFeB films to increase TMR ratio [13][14][15]. Lots of works are focused on annealing effects on structural, magnetic and spin dynamic properties of CoFeB films [16][17][18][19][20]. However, thermal related properties and crystallization behavior of the alloy films have not been systematically studied yet [21].…”

Section: Introductionmentioning

confidence: 99%

Magnetic, thermal, electrical properties and crystallization kinetics of Co60Fe20B20 alloy films

Wang

Huang

et al. 2016

Sci. China Mater.

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Magnetic, thermal and electrical properties of sputtered Co60Fe20B20 alloy films are investigated. An excellent linear relationship between the saturation magnetization per unit area and thickness is obtained in the as-deposited film with thickness ranging from 10 to 100 nm. For the as-deposited films a high effective saturation magnetization of 793.7 ± 42.9 emu cm −3 is derived from the fitting. An in-plane uniaxial magnetic anisotropy of~10 4 erg cm −3 in magnitude is revealed by angular dependent magnetic measurements. A fourfold cubic magnetic anisotropy is found to develop with annealing, in line with the improvement of the crystalline structure in the film confirmed by X-ray diffraction measurements. Thermomagnetic measurements reveal a considerable variation of the saturation magnetization with temperature arising from the competition of the crystallization and the temperature dependent ferromagnetic behavior of the alloy film. Pronounced changes in electrical resistivity with temperature were observed in the alloy film, in accompany with the structural change. The activation barrier for crystallization was determined to be 1.43 eV from the electrical measurements with variable heating rates, showing a good thermal stability of the alloy film.

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Section: Introductionmentioning

confidence: 99%

Magnetic, thermal, electrical properties and crystallization kinetics of Co60Fe20B20 alloy films

Wang

Huang

et al. 2016

Sci. China Mater.

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“…Fortunately, post-processes are typically depositions, etchings and lithography, operated at low temperatures. When annealing processes for enhancing GMR properties are required [14], the temperature must to be taken into account.…”

Section: Temperature Of Post-process Stepsmentioning

confidence: 99%

GMR Based Sensors for IC Current Monitoring

Reig

Cubells-Beltrán

2013

Giant Magnetoresistance (GMR) Sensors

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Abstract. The Giant MagnetoResistance (GMR) effect is a magnetic coupling mechanism that can be obtained in multilayer structures of few nanometers thick. In these devices, and at room temperature, the resistance is a function of the external magnetic field, at optimal levels for being used as sensors. Since the GMR effect was reported, scientists and engineers have dedicated their effort to this topic. This way, after two decades, a a very good knowledge of the GMR underlying physics together with notable designs of GMR based devices are nowadays available. They were initially used in the read heads of hard drives, but the constant evolution that this technology has experienced has open new fields of application, mainly related to the measurement of small magnetic fields using miniaturized devices, such as biotechnology and microelectronics.Regarding the microelectronics case, these sensors can be potentially used in those scenarios that require a detection or measurement of nonintrusive power by the indirect measurement of the magnetic field.In this chapter, an overview to the current research regarding the application of GMR sensors in the measurement of electrical currents at the integrated circuit (IC) level is drawn. In this particular case is important to take account of particular parameters of the GMR devices such as the sensing structures, the geometric arrangement and implementation of the sensors, the considered linear range, undesired couplings, biasing, hysteresis, temperature drifts, ... We have also described some cases of success describin particular applications of these devices. Finally, some aspects related to the monolithic integration of GMR devices onto standard CMOS engineered chips are also considered in this chapter.

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“…This is surprising and may be due to the residual boron content in the sample, which suppresses the long range recrystallization process. In a recent study by Vadalá et al 15 of CoFeB/MgO multilayers using different deposition and annealing methods a more pronounced MgO͑002͒ peak was observed. Also You et al 20 report about some recrystallization in CoFeB/MgO͑001͒ bilayers after annealing at 360°C for 1 h, albeit for a much thicker MgO layer of 20 nm instead of 1.6 nm in the present case.…”

Section: High Angle Hard X-ray Diffractionmentioning

confidence: 99%

“…Pym et al and AlO x sharpen considerably upon annealing up to 400°C. In a similar study on CoFeB/MgO multilayers using both x-ray and neutron reflectivity, Vadalá et al 15 not only compared different growth modes for the heterojunctions but also their structural changes upon annealing. In these multilayers the interface properties depend more on the preparation method used, then on the annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

The effect of annealing on the junction profile of CoFeB/MgO tunnel junctions

Zhernenkov

Vadalá

et al. 2010

Journal of Applied Physics

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The tunnelling magnetoresistance of CoFeB/MgO tunnel junctions is exceptionally high, although the electrodes and the barrier are grown at room temperature in the amorphous state. For their functionality annealing steps up to high temperatures are required. We have analyzed in detail the changes in the chemical and magnetization profile upon annealing up to 360°. The multilayers used for this study are similar to those which are used in magnetic tunnel junctions, however with five repeats. In particular, we have used hard non-resonant and soft resonant magnetic x-ray scattering in order to unravel any changes upon annealing. The multilayers exhibit superior structural quality, which hardly changes with annealing. Surprisingly, only little recrystallization of the CoFeB and the MgO layers can be discerned by x-ray diffraction.

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Structural characterization and magnetic profile of annealed CoFeB∕MgO multilayers

Cited by 15 publications

References 15 publications

Magnetic, thermal, electrical properties and crystallization kinetics of Co60Fe20B20 alloy films

Magnetic, thermal, electrical properties and crystallization kinetics of Co60Fe20B20 alloy films

GMR Based Sensors for IC Current Monitoring

The effect of annealing on the junction profile of CoFeB/MgO tunnel junctions

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