Structural characterization of chemically deposited Bi2S3 and Bi2Se3 thin films

A green and facile hydrothermal approach for the synthesis of high-quality semi-conducting Sb2S3 thin films

“…However, the spray pyrolysis method usually involves complicated processing steps, the spray precursor solutions need to be pre-prepared and subsequently sprayed onto the heated substrates, and the carrier air flow rate requires the precise control [12]. Meanwhile, the Sb2S3 films grown by the chemical bath deposition method are based on the reaction of Sb and S precursors at controlled temperatures [13]. Although the preparation procedure of this method is relatively simple, some oxides that generated as the impurities in aqueous solution easily precipitated onto the surface of the films, consequently retarding the performance of the assembled optoelectronic devices due to the recombination of charge carriers [14].…”

“…Moreover, as the deposition of Sb2S3 films is carried out in the solutions with the extra additives or specific solvents (e.g., glacial acetic acid [7] or acetone-water mixture [15,16]), the obtained band gap of 2.2 eV is not favorable for absorber layer materials of solar cells [17]. In addition, since the chemical bath deposition method mainly employs the antimony chloride and the toxic organics (e.g., thioacetamide [13]) as the precursors, the usage of complexing agents (e.g., EDTA [15] and tartaric acid [18]) or organic solvent (e.g., acetone [15,16]) is essential to prevent the precipitation of basic salt, causing a tedious post-purification to avoid the environment pollution. Obviously, it is highly desirable to develop a green and facile approach to synthesize high-quality Sb2S3 thin films as the absorber layer materials for solar cells.…”

Detailed photoluminescence study of vapor deposited films of different surface morphology

“…Bismuth sulfide () is a non‐toxic V–VI binary n‐type semiconductor and considered as a potential candidate for thin film solar cells . Determined band gaps reach from 1.2 to 2.0 eV and absorption coefficients of cm −1 in the visible region have been identified . So far, solar cells with either PbS or c‐Si () as p‐type layer lack efficiencies and have a rather low open‐circuit voltage meV compared to the band gap, indicating a loss of conversion efficiency either due to recombination via defects in the bulk or at the interfaces in the solar cell.…”

Fabrication and properties of Bi2S3−xSex thermoelectric polycrystals

“…Bismuth sulfide (Bi 2 S 3 ) with a 1.3 eV direct band gap [7,8] belongs to the family of compounds A 2 B 3 (where A ¼Bi, Sb, Pb and B ¼S, Se, Te), which is considered to be most promising for thermoelectric applications [9][10][11][12]. Chen et al [13].…”