Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition

Characterization of a-plane InN film grown on r-plane sapphire by MOCVD

“…4(b). This c-plane InN film is grown on a low-temperature InN buffer layer and the detailed growth conditions can be found elsewhere [18]. To our surprise, there are random islands with lateral size about 300 nm instead of stripe features on the surface of a-plane InN and the root-mean-square (rms) roughness is about 33 nm.…”

“…When the c-plane InN film was directly grown on sapphire under nonoptimized condition, its FWHM of (0 0 0 2) rocking curve is 146 arcmin. Using a low-temperature InN buffer or thick GaN template, the FWHM of (0 0 0 2) rocking curve is reduced to 65 and 22 arcmin, respectively [18]. RT hall measurement shows that our a-plane InN film has a mobility of 55 cm 2 V À1 s À1 .…”

“…However, this value is higher than that of the c-plane InN films grown by the same system. We have grown c-plane InN films on sapphire by different buffer layers in the same system and the growth conditions can be found there [18]. When the c-plane InN film was directly grown on sapphire under nonoptimized condition, its FWHM of (0 0 0 2) rocking curve is 146 arcmin.…”

Some physical investigations on ZnS1−xSex films obtained by selenization of ZnS sprayed films using the Boubaker polynomials expansion scheme

“…The II-VI semiconductors are important compounds, which have been investigated for their numerous applications especially in light-emitting and laser diodes and as Cd-free buffer layer in solar cells [1][2][3]. ZnSe/ZnS 1 À x Se x heterostructure has received a great deal of interest in optoelectronic devices such as a blue semiconductor laser with high optical power output and differential quantum efficiency at room temperature [4].…”

MOVPE growth of InN buffer layers on sapphire

“…Another approach was to develop a similar know-how on InN buffer layers. This kind of buffer was investigated on various substrates like GaN [10], GaP [11], Si [12] or SiC [13], but mostly on sapphire [14][15][16][17]. These studies of the buffer layers are essentially based on characterization results of the main InN layer, grown on top of the buffer layer.…”