Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD

Abstract

Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (Tdep) and total pressure (Ptot) on the orientation and surficial morphology were investigated. The results showed that the growth orientation of 3C-SiC columnar grains was strongly influenced by Tdep. With increasing Tdep, the columnar grains transformed from <111>- to <110>-oriented. The arrangement of <111>-oriented columnar grains was controlled by Ptot. Lotus-, turtle-, thorn-, and strawberry-like surface morphologies were naturally contributed by different arrangements of <111>-oriented grains, and the deposition mechanism was discussed. The wetting behaviors of CVD-SiC samples by molten aluminum were also examined at 1173 K in a high vacuum atmosphere.

Two-Dimensional SnSe Nanonetworks: Growth and Evaluation for Li-Ion Battery Applications

“…SEM images in Figure show the comparison in network morphology for the growth at 550 and 600 °C. A higher growth temperature is expected to yield a greater preference for high energy surface planes . This is seen by the increased growth of the less stable (001) and (010) planes, leading to increased density in branching with the branches that form being highly uneven along their length (see Figure , which shows the networks formed as a function of temperature).…”

“…A higher growth temperature is expected to yield a greater preference for high energy surface planes. 52 This is seen by the increased growth of the less stable (001) and (010) planes, leading to increased density in branching with the branches that form being highly uneven along their length (see Figure 4, which shows the networks formed as a function of temperature). This increased density in branching resulted in a less porous 2D network nanostructure at 600 °C compared to the growth at 550 °C (Figure 4).…”

Adhesive Hybrid SiO2.01C0.23Hx Nanoparticulate Coating on Polyethylene (PE) Separator by Roll-to-Roll Atmospheric Pressure Plasma

“…In addition, wet coatings with a binder usually involve wet processes, which are relatively complicated and environmental unfriendly [19,20]. Chemical vapor deposition (CVD) of SiO 2 and atomic layer deposition (ALD) of Al 2 O 3 or TiO 2 are novel methods with promising performances using a dry process conducted in a vacuum chamber for the preparation of composite separators or electrodes [21][22][23]. However, it is necessary to seek out more eco-efficient separator coating manufacturing processes to ensure the safety of LIBS.…”

“…Recently, non-thermally reactive atmospheric pressure plasma has attracted much attention for its simplicity and flexibility as a dry method of film deposition [23][24][25][26]. Plasma is an ionized gas composed of positive charged ions, negative charged ions, electrons, and radicals which have high reactive energy [27,28].…”

Eutectic Ceramic Composites by Melt-Solidification

“…Spark plasma sintering (SPS) and hotisostatic pressing can be used to fabricate UHTCs with fewer sintering additives, 1) and chemical vapor deposition (CVD) can help fabricate pure UHTCs with excellent hightemperature performance. 2) However, it is difficult to fabricate large-scale materials or materials with a complicated shape by using these techniques.…”