Structural correlation in tantalum nitride formation by direct nitrogen implantation

Tantalum nitride formation by low-energy (0.5-5 keV) nitrogen implantation

“…Furthermore, below saturation a clear dependence on the ion energy of the average composition reached at a particular ion dose is also observed. This dependence could explain the confusing behaviour found in previous works 14,15 in the identification of the Ta-N phases formed during nitrogen implantation in Ta by xray diffraction, because the influence of the ion energy on the film composition was not considered in those works.…”

Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: a factor analysis study of the Ta 4 f XPS core level

“…Ensinger et al [2] and Zhang et al [3], have shown using IBAD with nitrogen ions of 25 to 70keV and XRD, that the tantalum nitride films formed consist of a metastable cubic TaN phase. On the other hand, Zhou et al [12] and Raole et al [13] have studied the growth of tantalum nitride films by nitrogen implantation at 80 and 30keV, respectively. According to Zhou et al [12], there is a correlation between the types of nitrides formed and the ion dose.…”

“…On the other hand, Zhou et al [12] and Raole et al [13] have studied the growth of tantalum nitride films by nitrogen implantation at 80 and 30keV, respectively. According to Zhou et al [12], there is a correlation between the types of nitrides formed and the ion dose. Ta 2 N forms at lower ion doses and TaN starts to grow at higher ion doses.…”

“…Moreover, alternative techniques like ion beam assisted deposition (IBAD) [1][2][3][4] and nitrogen implantation [12][13][14]16,17], that allow the growth of the film keeping the substrate at low or moderate temperatures, have been also used recently by several groups.…”

“…The synthesis and characterisation of tantalum nitride thin films have attracted great interest during the last years due to their different technological applications, especially as protective hard coatings and diffusion barriers in copper metallizations [1][2][3][4][5][6][7][8][9][10][11][12][13][14].…”