Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD) scenario. We compare the structures resulting from the deposition of near-thermal (1 eV) SiO2 particles to those obtained with increasing fraction of 30 eV SiO2 particles. Our results show that there is an energy interval -between 12 and 15 eV per condensing SiO2 unit on average -for which the growth leads to a dense, low-stress amorphous structure, in satisfactory agreement with the results of low-energy ion-beam experiments. We also find that the crossover between low-and high-density films is associated with a tensile to compressive stress transition, and a simultaneous healing of structural defects of the a-SiO2 network, namely threeand four-fold rings. It is observed, finally, that densification proceeds through significant changes at intermediate length scales (4-10Å), leaving essentially unchanged the "building blocks" of the network, viz. the Si(O 1/2 )4 tetrahedra. This latter result is in qualitative agreement with the mechanism proposed to explain the irreversible densification of amorphous silica recovered from high pressures (∼ 15-20 GPa).