Structural defects in CVD ZnS

Karaksina, E.V.; Грачева, Т. А.; Shevarenkov, D. N.

doi:10.1134/s0020168510010024

Cited by 11 publications

(3 citation statements)

References 10 publications

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“…Sphalerite phase can be considered as zinc-poor while wurtzite is a sulfur-poor phase generating V Zn and V S defects, respectively. [21][22][23] The stoichiometry variations depend on the experimental conditions and therefore on the synthesis method. 21 When adding another element, it is necessary to consider its solubility.…”

Section: Introductionmentioning

confidence: 99%

Role of Cu⁺ on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Role of Cu⁺ on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties

et al. 2016

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“…As the growth process of CVDZnS is complex, the mechanisms for the chemical reaction and the formation of microstructures and defects remain unclear [3,[5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Defects in CVDZnS

Lü

Wang

et al. 2011

Rare Metals

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Defects seriously influence the optical properties and mechanical properties of CVDZnS. The deposition technique was introduced and experiment methods such as SEM, TEM and OM were adopted to study the defects: hexagonal phase, abnormally large grains, micro-cracks, micro-pores and impurities. The microstructures of these defects were observed, and the formation mechanisms of these defects were analyzed. Hexagonal ZnS as an impurity causes anisotropy in different directions with different refraction indexes and increases the scattering of CVDZnS. Increasing the deposition temperature can inhibit the formation of the hexagonal phase. The main reason for the growth of abnormally large grains in CVDZnS is high deposition rate. The lower deposition temperature increases growth stress in CVDZnS, which consequently results in the bowing of CVDZnS plates, and introduces microscopic defects such as grain blending and micro-cracks in the crystal. Micro-pores and impurities are induced by high reactant concentration in the local deposition chamber, which can be avoided by improving the gas flowing so as to make the concentration more uniform.

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“…Chemical vapor deposition (CVD) [6][7], sol gel method (Sol-gel) [8], atomic layer epitaxy (ALE) [9], thermal evaporation method [10][11], electrochemical deposition (ECD) [12][13] and pulsed laser deposition (PLD) [14] are the main chemical methods. And the ZnS which is used as a solar cell buffer layer is almost prepared by chemical bath deposition [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Preparation of ZnS Modified PHBV Film by Chemical Bath Deposition Method

Chen¹,

Guo²

2015

Proceedings of the International Conference on Chemical, Material and Food Engineering

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Abstract-Zinc nitrate hexahydrate, ethylene glycol, thiourea and triethanolamine were purchased to be starting materials. Nano zinc sulfide solution has been successfully prepared by Chemical bath deposition method, and then the prepared zinc sulfide modified polyhydroxybutyrate valerate (PHBV) to form the thin film. The morphology, structure, transparency and luminescent properties of the prototype were characterized by X-ray diffraction, UV-visible spectrophotometer, polarized light microscopy, scanning differential thermal balance and fluorescence spectrophotometer. The results show that ZnS is the presence of a nucleating agent in the PHBV. With the zinc sulfide modified PHBV, the nucleation density and the toughness of the film can be improved while the composite film have fluorescence. But the addition of zinc sulfide can not change the crystal structure of PHBV films which will reduce the thermal stability of PHBV and inhibit the process of crystallization.

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Structural defects in CVD ZnS

Cited by 11 publications

References 10 publications

Role of Cu⁺ on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties

Role of Cu⁺ on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties

Defects in CVDZnS

Preparation of ZnS Modified PHBV Film by Chemical Bath Deposition Method

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Structural defects in CVD ZnS

Cited by 11 publications

References 10 publications

Role of Cu+ on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties

Role of Cu+ on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties

Defects in CVDZnS

Preparation of ZnS Modified PHBV Film by Chemical Bath Deposition Method

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Product

Resources

About

Role of Cu⁺ on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties

Role of Cu⁺ on ZnS:Cu p-type semiconductor films grown by sputtering: influence of substitutional Cu in the structural, optical and electronic properties