2010
DOI: 10.1016/j.jallcom.2010.04.095
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Structural, dielectric and magnetic properties of Pr substituted Bi1−xPrxFeO3 (0≤x≤0.15) multiferroic compounds

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Cited by 83 publications
(37 citation statements)
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“…Ion doping at Bi or Fe sites destroys the modulated structure and leads to the weak ferromagnetic ordering. No obvious hysteresis loop is observed in the case of BPF ceramic, similar to previously reported results for Pr-substituted samples [22,25]. …”
Section: Resultssupporting
confidence: 91%
See 1 more Smart Citation
“…Ion doping at Bi or Fe sites destroys the modulated structure and leads to the weak ferromagnetic ordering. No obvious hysteresis loop is observed in the case of BPF ceramic, similar to previously reported results for Pr-substituted samples [22,25]. …”
Section: Resultssupporting
confidence: 91%
“…The remnant polarization P r and coercive field E c are 0.11 μC/cm 2 and 5.42 kV/cm for BPFT-10, and 0.29 μC/cm 2 and 13.67 kV/cm for BPFT-5, respectively. The P r value of BPFT-5 is similar to those reported for BiFe 0.9 Ti 0.05 O 3 and Bi 0.85 Pr 0.15 FeO 3 [22][23]. The high P r value of BPFT-10 relative to that of BFT indicates that Pr doping improves the ferroelectric performance.…”
Section: Introductionsupporting
confidence: 78%
“…The PbZrO 3 -like structure (Pbam space group) has already 40 atoms in the unit cell. The same method of the supercell was used in [34,44]. The supercells of BiFeO 3 of aforementioned structures are presented in Fig.…”
Section: Methods Of Calculationsmentioning
confidence: 99%
“…Experimental studies of partial substitution of Bi 3? by Pr rare-earth ions in BiFeO 3 show also a large diversity in crystal phases [34,35]. Temperature-induced structural and magnetic phase transition in disordered Bi 1-x Nd x FeO 3 (0 \ x \ 0.1625) is an object of the recent published study by Xu et al [36].…”
Section: Introductionmentioning
confidence: 99%
“…Because of room-temperature coupling between ferroelectric and magnetic order parameters, it brings forth a novel phenomenon known as magnetoelectric effect (ME), in which polarization can be tuned by magnetic field and vice versa. This coupling provides an additional opportunity for the design of magnetoelectric and spintronic devices [2][3][4]. Multiferroic materials have gained tremendous attention on account of their potential applications in various fields, such as bubble memory device, microwave, satellite communication, audio-video, digital recording [4,5], sensor, multiple state memory element, electro-ferromagnetic resonance  device [6], thin film capacitor, non-volatile memory [7], optoelectronics, solar energy device [4], highdensity ferroelectric magnetic random access memory [8], and permanent magnet [9].…”
Section: Introductionmentioning
confidence: 99%