STRUCTURAL, ELECTRICAL AND MAGNETIC CHARACTERIZATION OF Ni–Cu–Zn SPINEL FERRITES

Abstract

Ni – Cu – Zn ferrite materials have been extensively used in multilayer chip inductors because of their remarkable properties at higher frequencies. In the present work, single phase Ni 0.35 Cu 0.05 Zn 0.60 Fe 1.98 O 4-δ ferrite, has been prepared by microwave sintered (MS) method. In comparison with the conventional sintering method (CS), the sintering temperature and time for this MS method were significantly reduced to 30 min and 950°C from 5 h and 1250°C for the CS process. The frequency dependence of the dielectric properties such as dielectric constant (ε'), dielectric loss ( tan δ) were studied. The temperature dependence of magnetic initial permeability (μi) was studied. The saturation magnetization was also studied as a function of magnetic field. These microwave sintered ferrites results were compared with the properties of ferrites prepared by conventional sintering method in normal heating. Microwave sintering improves structural as well as electromagnetic parameters measured and thus makes the ferrite more suitable in microwave applications and electromagnetic devices.

Nanostructured K‐Doped ZnO Thin Films: Synthesis and Investigations

“…The reduction in tan loss made these thin films appropriate for a variety of high‐device applications, including electronic components, laptop computers, mobile telephones, and multilayered wafer inductors. [ 54 ]…”

“…[3] The reduction in tan loss made these thin films appropriate for a variety of high-device applications, including electronic components, laptop computers, mobile telephones, and multilayered wafer inductors. [54] The noticeable drop in dielectric constant and tangent loss with increasing frequency was due to the fact that at higher frequencies, the polarization lagged behind the applied field.…”

Probing the impact of Ba on properties of ZnO at the nanoscale: optical, dielectric and antibacterial activity evolution

“…The dielectric tan loss was likewise reduced when Ba doping content was enhanced [88]. Due to the reduction of dielectric tan loss, thin films were appropriate for a variety of highfrequency purposes, including notebook computers [89], multilayer chip inductors [90], electrical devices and cellular phones. The applied frequency had the same effect on the dielectric constant and tangent loss [91].…”