Structural, ferroelectric and magnetic properties of lead ferrite (Pb2Fe2O5) thin films synthesized by reactive magnetron deposition

Beklešovas, Benas; Stankus, Vytautas; Link, Joosep; Stern, Raivo

doi:10.1016/j.tsf.2020.138124

Cited by 5 publications

(2 citation statements)

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“…The bandgap energy value of the tin oxide (SnO2) thin layer is still quite high, around 3.72 eV [10], so it needs to be modified by adding donors or other atoms to the material. Several other atoms are added namely, ferrum [11], aluminum-zinc [12], indium [13] and fluorine [14]. In this study, the doping materials used are aluminum, fluorine, and indium with the hope that the layer transparency rate increases and the bandgap energy obtained is lower than the previous band gap energy.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

Doyan

Susilawati

Taufik

2021

MSF

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The manufacture of a thin layer of SnO2: (Al + F + In) was carried out by using the sol-gel spin coating method on a glass substrate with various temperatures (25, 50, 100, 150, and 200 °C).The purpose of this study is to determine the optical properties of thin layers which include transmittance, absorbance, band gap energy and activation energy. The optical properties of the coating were characterized using a UV-Vis spectrophotometer with a wavelength of 200-1100 nm. The results showed that the absorbance value increased with increasing temperature at a wavelength of 300 nm. The absorbance values obtained for temperature variations were in the percentages of 95: 5% and 75: 25%, respectively 3.46-4.50 and 3.96-5.76. The transmittance value obtained increased, namely 73.00-86.30% and 74.20-99.30%. In addition, the energy band gap decreased from 3.60-3.41 eV and 3.57-3.31 eV for direct allowed, while 3.69-3.58 eV and 3.65-3.54 eV for indirect allowed. Activation energy decreased from 2.00-1.18 eV and 1.60-1.12 eV. In general, the absorbance and transmittance values increase with increasing ripening temperature and the addition of doping aluminum, fluorine, and indium, while the bandgap energy and activation energy values obtained decrease with increasing ripening temperature and increasing the doping percentage of aluminum, fluorine, and indium. The decrease in the value of the bandgap energy and the activation energy can make it easier for electrons to move from the valence band to the conduction band so that the material is slightly conductive and acts as a semiconductor.

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Section: Introductionmentioning

confidence: 99%

The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

Doyan

Susilawati

Taufik

2021

MSF

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“…12 The previous study demonstrated the successful deposition of PFO thin films with a remnant polarization of 60,9 μC cm −2 , which indicates promising applications for PFO. 13 Particular attention should be dedicated to addressing the challenges related to high leakage current and lower magnetoelectric coupling coefficients. Doping is considered a highly effective method for modifying the fundamental properties of multiferroics to address these issues.…”

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confidence: 99%

Synthesis and Characterization of Cr-Doped Pb₂Fe₂O₅ Thin Films by Reactive Magnetron Sputtering

Beklešovas,

Stankus,

Abakevičienė

et al. 2023

ECS J. Solid State Sci. Technol.

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Multiferroic materials, which exhibit simultaneous ferroelectricity, ferromagnetism, and ferro-elasticity, have attracted significant attention due to their multifunctional properties. Coupling between ferroelectric and magnetic properties has led to the development of non-volatile memory devices, transducers, magnetic field sensors, and other applications. Pb2Fe2O5 (PFO) is a promising multiferroic material due to it simultaneously exhibiting ferroelectricity and ferromagnetism at room temperature. Doping with aliovalent ions, such as Cr3+, has been proposed as an effective method for enhancing the ferroelectric and magnetic properties, consequently leading to the enhancement of multiferroic properties. The investigation shows that the lead ferrite phase (220) was present in all samples, but its abundance reduced with increasing synthesis temperature due to lead desorption. Dielectric measurements revealed that PFO films with highest Cr concentration had the highest polarization (Pr) of 72.2 μC cm−2. The study also found that the magnetization of PFO films was up to 9.5·10−7 μAm2 at an ambient temperature of 5 K, and the magnetic ordering temperature was 363 K, corresponding to the magnetic ordering temperature of chromium oxides. The morphology of Cr doped PFO films changed with increasing chromium content, resulting in a reduction in grain size and an increase in the film density.

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Chemical Composition of Classical Fillers

Wypych¹

2023

Functional Fillers

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Structural, ferroelectric and magnetic properties of lead ferrite (Pb2Fe2O5) thin films synthesized by reactive magnetron deposition

Cited by 5 publications

References 34 publications

The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

Synthesis and Characterization of Cr-Doped Pb₂Fe₂O₅ Thin Films by Reactive Magnetron Sputtering

Chemical Composition of Classical Fillers

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Structural, ferroelectric and magnetic properties of lead ferrite (Pb2Fe2O5) thin films synthesized by reactive magnetron deposition

Cited by 5 publications

References 34 publications

The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

Synthesis and Characterization of Cr-Doped Pb2Fe2O5 Thin Films by Reactive Magnetron Sputtering

Chemical Composition of Classical Fillers

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Synthesis and Characterization of Cr-Doped Pb₂Fe₂O₅ Thin Films by Reactive Magnetron Sputtering