2005
DOI: 10.1016/j.physb.2005.08.024
|View full text |Cite
|
Sign up to set email alerts
|

Structural, ferroelectric and optical properties of PZT thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

7
41
0
1

Year Published

2009
2009
2020
2020

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 99 publications
(49 citation statements)
references
References 16 publications
7
41
0
1
Order By: Relevance
“…The spontaneous polarization of PZT was found to be 68.5 µC/cm 2 . This value was in good agreement with the polarization of PZT obtained in previous experimental and theoretical studies [36,37]. The calculated total electronic densities of states (TDOS) for bulk La 0.67 Sr 0.33 MnO 3 , bulk PbZr 0.2 Ti 0.8 O 3 , and the LSMO/PZT (001) interface are compared in Fig.…”
Section: Resultssupporting
confidence: 88%
See 1 more Smart Citation
“…The spontaneous polarization of PZT was found to be 68.5 µC/cm 2 . This value was in good agreement with the polarization of PZT obtained in previous experimental and theoretical studies [36,37]. The calculated total electronic densities of states (TDOS) for bulk La 0.67 Sr 0.33 MnO 3 , bulk PbZr 0.2 Ti 0.8 O 3 , and the LSMO/PZT (001) interface are compared in Fig.…”
Section: Resultssupporting
confidence: 88%
“…For the tetragonal bulk structure of PZT, our calculations predicted a band gap of 2.1 eV. The computed band gap for PZT was in good agreement with previous theoretical DFT-GGA studies [38], but was lower than the experimental optical gap of 3.4 eV measured in PZT films [36]. The difference between the theoretical band gap and the experimental optical gap in PZT can be attributed to the limitations of the DFT-GGA computational approach, which tends to underestimate band gaps in semiconductors and insulators.…”
Section: Resultssupporting
confidence: 88%
“…An electric field E induces a strain = e · E of the piezoelectric element is-land, which generates a stress σ = · Y acting on the attached piezomagnetic layer where Y denotes the Young's modulus of the piezoelectric material. For a piezoelectric island which has large piezoelectric constants, such as Pb[Zr x xTi 1−x ]O 3 (PZT) which has low absorption [39], the electric-field-induced strain can be as large as e ∼ 0.0002(MV/m) −1 , the corresponding Young's modulus is Y ∼ 10 5 MPa [40]. The mediated coupling coefficient between the NV-spin (at a depth of 15 nm) and the electric field is thus d∆/dE = ( e · Y )(d∆/dσ) = 34kHz · (V/cm) −1 , as compared with the direct coupling coefficient of ∼ 10Hz · (V/cm) −1 [28].…”
mentioning
confidence: 99%
“…These values are reported in Table 1, along with some experimental values reported in the literature for systems such as Pt/PZT/ITO (ITO as bottom electrode) [10,12,13] and ITO/PZT/ITO (ITO used as both electrodes) [14].…”
Section: Resultsmentioning
confidence: 99%