Thin sputtered films of TiO2 of various thicknesses are characterized by their strain along the crystalline c−axis. The Raman B1g 519 cm−1 mode experiences a strong blue shift, whereas the Eg 144 cm−1 peak is at the standard position for all samples. The Raman intensity of the prominent Eg 144 cm−1 peak increases upon annealing at 300 °C, contrary to the integral intensity of XRD reflexes which remains constant. The half−width of the Eg 144 cm−1 peak is determined by the crystallite size. Dielectric modelling of the optical transmittance spectra indicates, for all samples, the existence of defect states leading to transitions 0.3−0.5 eV lower than the band gap. The growth process becomes stationary for a film thickness above 100 nm for rf−sputtered and above 200 nm for dc−sputtered films.