Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition

Gardelis, S.; Androulakis, J.; Giapintzakis, J.; Monnereau, O.; Buckle, Philip Derek

doi:10.1063/1.1807026

Cited by 16 publications

(11 citation statements)

References 21 publications

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“…Recently, we reported on the successful growth of stoichiometric polycrystalline NiMnSb thin films on InSb substrates using pulsed laser deposition (PLD). 1 Our films exhibit a saturation magnetization of 4 µ Β /formula unit at 5 K and a magnetization temperature dependence that follows Bloch's T 3/2 law, consistently with the expected half-metallic behavior.…”

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confidence: 68%

Negative giant longitudinal magnetoresistance inNiMnSb∕InSb: Interface effect

et al. 2006

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We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant magnetoresistance (GMR) effect is observed when the external magnetic field is parallel to the surface of the film and to the current direction. We attribute the observed phenomenon to magnetic precipitates formed during the magnetic film deposition and confined to a narrow layer at the interface. The effect of these precipitates on the magnetoresistance depends on the thermal processing of the system.

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confidence: 68%

Negative giant longitudinal magnetoresistance inNiMnSb∕InSb: Interface effect

et al. 2006

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“…The NiMnSb films were grown by PLD onto heated (T s ~ 200 °C) n-type InSb (100) substrates. Conditions of the growth as well as structural and magnetic properties of the films are presented elsewhere [9]. Detailed magnetoresistance measurements were performed on the NiMnSb/InSb system as well as the InSb substrate before film deposition.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, we reported on the successful growth of stoichiometric polycrystalline NiMnSb thin films on InSb substrates by pulsed laser deposition (PLD) [9]. The films had staturation magnetization of 4µ Β /formula unit at 5 K and a magnetization temperature dependence that follows Bloch's T 3/2 law, as expected for half-metallic ferromagnets.…”

Section: Originalmentioning

confidence: 96%

Magneto‐transport properties of NiMnSb thin films on InSb single crystals: Negative giant magnetoresistance

Gardelis

Androulakis

Viskadourakis

et al. 2007

Physica Status Solidi (a)

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In this study we investigated the magneto-transport properties of the ohmic contact between polycrystalline NiMnSb thin films grown by pulsed laser deposition and n-type degenerate InSb (100) substrates. An unusual negative giant magnetoresistance (n-GMR) effect is found when the external magnetic field is parallel to the in-plane current direction. A similar effect is also observed when Ni films are deposited on InSb substrates. On the other hand, no n-GMR effect is displayed when the deposited film is nonmagnetic. Grazing-incidence X-ray reflectometry shows the formation of a low-density NiMnSb layer at the interface. The presence of such a layer coincides with the appearance of the n-GMR.We argue that the n-GMR effect is due to magnetic precipitates formed at the interface during the growth of the magnetic films. We propose that these precipitates align their magnetic moments in the direction of the external magnetic field and thus, the spin dependent scattering of the electrons is reduced. The effect of these precipitates on the magnetoresistance depends on the thermal processing of the system.

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“…Among them, NiMnSb was predicted to be a robust half-metallic ferromagnet (HMF) by band structure calculations with a relatively high Curie temperature (T C ) of 728 K [4,5]. It has been widely reported that high-quality NiMnSb thin films have been successfully deposited on various semiconductor substrates [6][7][8]. It is somehow disappointing that only a very low spin polarization has been obtained in NiMnSb by using interfacesensitive methods like Andreev-reflection or surface-sensitive methods like spin-resolved photoemission [9,10].…”

Section: Introductionmentioning

confidence: 99%