2008
DOI: 10.1016/j.jnoncrysol.2008.05.077
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Structural, magnetic and transport properties of ion beam deposited Co thin films

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Cited by 15 publications
(8 citation statements)
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“…Figure 7(a) shows the room temperature ρ * (t) dependence for the nanohole array samples. Initially, ρ * (t) has a similar trend to the continuous thin films, decreasing rapidly as t increases (inset of figure 7(a)) [28,42]. However, a minimum is visible around t 50 nm, which is close to our extrapolated thickness for the closure of the nanopores (figure 2(a)).…”
Section: Discussionsupporting
confidence: 75%
See 1 more Smart Citation
“…Figure 7(a) shows the room temperature ρ * (t) dependence for the nanohole array samples. Initially, ρ * (t) has a similar trend to the continuous thin films, decreasing rapidly as t increases (inset of figure 7(a)) [28,42]. However, a minimum is visible around t 50 nm, which is close to our extrapolated thickness for the closure of the nanopores (figure 2(a)).…”
Section: Discussionsupporting
confidence: 75%
“…On top of the AAO we deposited a NiFe (80:20) thin film using a 1160L four-target ion-beam deposition (IBD) system from Commonwealth Scientific Corporation with a base pressure of ∼8 × 10 −7 Torr [28]. A beam voltage of 1000 V and a beam current of 15 mA were used, giving a NiFe deposition rate of 0.035 nm s −1 for an Ar flow of 5 sccm with the working pressure of ∼2 × 10 −4 Torr.…”
Section: Methodsmentioning
confidence: 99%
“…As a result, higher partial pressures and growth rates are achievable. In contrast to conventional film fabrication methods, [18] the rate-determining step is surface kinetics and mass diffusion rather than feed rate-limited deposition. Furthermore, the contingencies of catalytic decomposition of the precursor due to metal Full Paper deposition inside the evaporation zone, and of unfavorable gas phase reactions prior to deposition, are diminished.…”
Section: Discussionmentioning
confidence: 99%
“…Films consisting of ten Fe-V bilayers with a total thickness of 20 nm were prepared onto the native oxide layer of Si(100) substrates by pulsed laser deposition (PLD) and ionbeam deposition (IBD) [21]. PLD experiments were carried out with an excimer laser (wavelength of 248 nm, pulse duration of 30 ns) operating at a pulse repetition rate of 10 Hz.…”
Section: Methodsmentioning
confidence: 99%