Structural, microchemical and superconducting properties of ultrathin NbN films on silicon

Schneider, R.; Freitag, Bert; Gerthsen, D.; Ilin, K.; Siegel, M.

doi:10.1002/crat.200900462

Cited by 20 publications

(16 citation statements)

References 13 publications

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“…(3) It is generally easier to be homogeneously disordered for a binary compound, like well-studied InO x and TiN films. Figure 1 shows that a nice superconductor-insulator transition is observed when the film thickness is reduced to a few unit cell 30 (one unit cell = 0.44nm). Superconducting and insulating films are separated by quantum resistance for cooper pairs, which is h/4e 2 = 6.45 kΩ.…”

Section: Methodsmentioning

confidence: 99%

Robustness of the Berezinskii-Kosterlitz-Thouless transition in ultrathin NbN films near the superconductor-insulator transition

et al. 2013

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Occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated by superfluid density measurements for two-dimensional (2D) disordered NbN films with disorder level very close to a superconductor-insulator transition (SIT). Our data show a robust BKT transition even near this 2D disorder-tuned quantum critical point (QCP). This observation is in direct contrast with previous data on deeply underdoped quasi-2D cuprates near the SIT. As our NbN films approach the quantum critical point, the vortex core energy, an important energy scale in the BKT transition, scales with the superconducting gap, not with the superfluid density, as expected within the standard 2D-XY model description of BKT physics.

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Section: Methodsmentioning

confidence: 99%

Robustness of the Berezinskii-Kosterlitz-Thouless transition in ultrathin NbN films near the superconductor-insulator transition

et al. 2013

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“…If some parts of the strip are poorly protected by the resist etching via ion milling may decrease the thickness of the strip in those parts. The decrease of the thickness leads to suppression of superconductivity due to the intrinsic proximity effect [11,13]. Additional suppression initiated by the milling can be even larger than the suppression expected for the film of the same final thickness prepared directly by deposition.…”

Section: A Modelmentioning

confidence: 99%

Proximity effect model of ultranarrow NbN strips

et al. 2017

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We show that narrow superconducting strips in superconducting (S) and normal (N) states are universally described by the model presenting them as lateral NSN proximity systems in which the superconducting central band is sandwiched between damaged edge-bands with suppressed superconductivity. The width of the superconducting band was experimentally determined from the value of magnetic field at which the band transits from the Meissner state to the static vortex state. Systematic experimental study of 4.9 nm thick NbN strips with widths in the interval from 50 nm to 20 m, which are all smaller than the Pearl's length, demonstrates gradual evolution of the temperature dependence of the critical current with the change of the strip width.

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“…It is well documented that the majority of the studies related to NbN are related to its superconducting properties [2][3][4]. Other excellent properties are high hardness and toughness compared to pure Nb, which makes it a suitable material for protective-wear coatings [5][6][7][8][9]. Kneisel et al, 2009 adopted the Conflat design with Nb and concluded that RF measurements on single-cell cavities indicated Nb-1Zr and NbN are good candidates for the flanges [5].…”

Section: Introductionmentioning

confidence: 98%

“…PLD is widely used for fabrication of many thin film materials such as hightemperature superconductors, semiconductors, and dielectrics [12]. Among these materials, niobium nitride films that have attracted considerable attention because of their excellent superconducting and mechanical properties [3,4,8,9,[13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

et al. 2012

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Nanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic -NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pileup. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

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Structural, microchemical and superconducting properties of ultrathin NbN films on silicon

Cited by 20 publications

References 13 publications

Robustness of the Berezinskii-Kosterlitz-Thouless transition in ultrathin NbN films near the superconductor-insulator transition

Robustness of the Berezinskii-Kosterlitz-Thouless transition in ultrathin NbN films near the superconductor-insulator transition

Proximity effect model of ultranarrow NbN strips

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

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