Structural modification of swift heavy ion irradiated amorphous Ge layers

Wesch, W.; Schnohr, Claudia; Kluth, Patrick; Hussain, Zakria; Araujo, Leandro; Giulian, Raquel; Sprouster, David; Byrne, Aidan; Ridgway, Mark C

doi:10.1088/0022-3727/42/11/115402

Cited by 34 publications

(28 citation statements)

References 26 publications

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“…Only for very small ion tracks with radii less than 2 nm, RBS/c yields lower values of the ion track sizes than TEM because such small tracks tend to be discontinuous. Analyzing ion tracks in amorphous materials is even more challenging, but recently other techniques like small angle X-ray scattering (SAXS) and infrared spectroscopy (IR) were found to be applicable [29][30][31][32][33][34][35].…”

Section: Materials Response To Energetic Ionsmentioning

confidence: 99%

Response of GaN to energetic ion irradiation: conditions for ion track formation

Karlušić¹,

Kozubek²,

Lebius³

et al. 2015

J. Phys. D: Appl. Phys.

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We investigated the response of wurzite GaN thin films to energetic ion irradiation. Both swift heavy ions (92 MeV Xe 23+ , 23 MeV I 6+ ) and highly charged ions (100 keV Xe 40+ ) were used. After irradiation, the samples were investigated using atomic force microscopy, grazing incidence small angle X-ray scattering, Rutherford backscattering spectroscopy in channelling orientation and time of flight elastic recoil detection analysis. Only grazing incidence swift heavy ion irradiation induced changes on the surface of the GaN, when the appearance of nanoholes is accompanied by a notable loss of nitrogen. The results are discussed in the framework of the thermal spike model.

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Section: Materials Response To Energetic Ionsmentioning

confidence: 99%

Response of GaN to energetic ion irradiation: conditions for ion track formation

Karlušić¹,

Kozubek²,

Lebius³

et al. 2015

J. Phys. D: Appl. Phys.

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“…Discontinuous tracks follow single-ion irradiation (S e ¼ 35 keV=nm) [4,5] while cluster-ion irradiation (S e ¼ 37-51 keV=nm) yields tracks of diameter 5-15 nm [5]. In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7]. These observations are consistent with g amorphous > g crystalline and ion-track formation has been suggested as the origin of these two phenomena [6,7].…”

mentioning

confidence: 99%

“…In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7]. These observations are consistent with g amorphous > g crystalline and ion-track formation has been suggested as the origin of these two phenomena [6,7]. A recent molecular dynamics (MD) study of irradiated a-Ge [8] suggested voids originate from outgoing shock waves resulting from rapid heating and expansion of the ion-track core.…”

mentioning

confidence: 99%

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

et al. 2013

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Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification. DOI: 10.1103/PhysRevLett.110.245502 PACS numbers: 61.80.Jh, 61.43.Dq, 61.43.Bn, 61.05.cf Swift heavy-ion irradiation (SHII) has many applications, spanning geochronological dating [1] to nanostructure fabrication [2]. Though this approach has found industrial application [3], the fundamental nature of ionsolid interactions at very high ion energies remains poorly understood. Such interactions are dominated by inelastic processes (electronic stopping) resulting in the excitation and ionization of substrate atoms while, in contrast, the elastic processes (nuclear stopping) that lead to ballistic atomic displacements at much lower energies are negligible in the SHII regime. The efficiency with which energy deposited in the electronic subsystem is subsequently transferred to the lattice is governed by the electronphonon coupling parameter g where typically g amorphous > g crystalline due to a reduced electron mean free path in the former. When the lattice temperature exceeds that required for melting, a narrow cylinder of molten material is formed along the ion path. The ensuing rapid resolidification of this transient liquid phase can yield remnant structural modifications within the substrate in the form of an ion track.Crystalline Ge (c-Ge) is relatively insensitive to SHII such that ion-track production necessitates very high electronic stopping S e values. Discontinuous tracks follow single-ion irradiation (S e ¼ 35 keV=nm) [4,5] while cluster-ion irradiation (S e ¼ 37-51 keV=nm) yields tracks of diameter 5-15 nm [5]. In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7]. These observations are consistent with g amorphous > g crystalline and ion-track formation has been suggested as the origin of these two phenomena [6,7]. A recent molecular dynamics (MD) study of irradiated a-Ge [8] suggested voids originate from outgoing shock waves resulting from rapid heating and expansion of the ion-track core. The sole report of ion tracks in a-Ge is that of Furuno et al. [9] who reported recrystallization of tracks in a 5-nm a-Ge layer following SHII in a grazing-incidence orientation, a geometry that can lead to significant reductions in threshold S e values for ion-track formation [10]. The proximity of the surface could also perturb resolidification and enable recrystallization given the molten i...

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“…The waveguide region can effectively improve the linear and nonlinear optical performance of the device and produce a laser output under lower-pumping laser excitation [11,12]. There are several methods to fabricate waveguide structures with optical materials, such as diffusion, ion exchange, sol-gel, femtosecond-laser inscription, ion irradiation, and deposition [13][14][15][16]. However, as reported in Ref.…”

Section: Introductionmentioning

confidence: 99%