Structural modifications induced by ion irradiation and temperature in boron carbide B4C

Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, Julie; Pradeilles, Nicolas; Rapaud, Olivier; Maı̂tre, Alexandre; Gosset, Dominique

doi:10.1016/j.nimb.2015.07.082

Cited by 24 publications

(8 citation statements)

References 18 publications

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“…According to L. Desgranges et al [ 52 ], displacement of X-ray diffraction spectra was observed in a sample of B 4 C boron carbide irradiated with thermal neutrons. Peak displacement and decrease in intensity are characterized by the deviation of atoms from the coordinates of the crystal lattice, i.e., formation of defect cascade and the degradation or amorphization of the crystal structure under the influence of high-energy ion streams [ 53 , 54 ]. The crystallite size, determined with help of the Scherrer equation, is shown in Table 1 for the unirradiated and irradiated B 4 C boron carbide sample under 167 MeV energy 132 Xe 26+ SHIs at 3.83 × 10 14 ion/cm 2 .…”

Section: Swift Heavy Ion Irradiation: X-ray Diffractionmentioning

confidence: 99%

Modeling and X-ray Analysis of Defect Nanoclusters Formation in B4C under Ion Irradiation

et al. 2022

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In the presented work, B4C was irradiated with xenon swift heavy ions at the energy of 167 MeV. The irradiation of the substrate was done at room temperature to a fluence of 3.83 × 1014 ion/cm2. The samples were then analyzed with the X-ray diffraction technique to study the structural modification, as it can probe the region of penetration of xenon atoms due to the low atomic number of the two elements involved in the material under study. The nano-cluster formation under ion irradiation was observed. Positron lifetime (PLT) calculations of the secondary point defects forming nanoclusters and introduced into the B4C substrate by hydrogen and helium implantation were also carried out with the Multigrid instead of the K-spAce (MIKA) simulation package. The X-ray diffraction results confirmed that the sample was B4C and it had a rhombohedral crystal structure. The X-ray diffraction indicated an increase in the lattice parameter due to the Swift heavy ion (SHI) irradiation. In B12-CCC, the difference between τ with the saturation of H or He in the defect is nearly 20 ps. Under the same conditions with B11C-CBC, there is approximately twice the value for the same deviation.

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Section: Swift Heavy Ion Irradiation: X-ray Diffractionmentioning

confidence: 99%

Modeling and X-ray Analysis of Defect Nanoclusters Formation in B4C under Ion Irradiation

et al. 2022

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“…Disorder can here arise from irradiation defects or from a high density of phonon diffusion centers. Regarding the structural irradiation defects, we have shown [24,25] that they were not stable for irradiation temperatures above 500°C. Then, only diffusion centers can be considered.…”

Section: Annealingmentioning

confidence: 99%

Evolution of thermo-physical properties and annealing of fast neutron irradiated boron carbide

Gosset

Kryger²,

Bonal

et al. 2018

Journal of Nuclear Materials

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Boron carbide is widely used as a neutron absorber in most nuclear reactors, in particular in fast neutron ones. The irradiation leads to a large helium production (up to 10 22 /cm 3) together with a strong decrease of the thermal conductivity. In this paper, we have performed thermal diffusivity measurements and X-ray diffraction analyses on boron carbide samples coming from control rods of the French Phenix LMFBR reactor. The burnups range from 10 21 to 8.10 21 /cm 3. We first confirm the strong decrease of the thermal conductivity at the low burnup, together with high microstructural modifications: swelling, large microstrains, high defects density, and disordered-like material conductivity. We observe the microstructural parameters are highly anisotropic, with high micro-strains and flattened coherent diffracting domains along the (00l) direction of the hexagonal structure. Performing heat treatments up to high temperature (2200°C) allows us to observe the material thermal conductivity and microstructure restoration. It then appears the thermal conductivity healing is correlated to the micro-strain relaxation. We then assume the defects responsible for most of the damage are the helium bubbles and the associated stress fields.

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“…We have then evaluated the damage produced by different ions of different energy (see [19] for the choice of some ions) to estimate the possibility of reproducing the damage evaluated in the previous section (Table 3.).…”

Section: Applicationmentioning

confidence: 99%

“…This is of course no longer acceptable if helium has to be implanted in the damage zone. An acceptable compromise is to use heavy ions with intermediate energy (a few MeV): in that case, the ballistic damage can be made realistic and the electronic slowing down is a bit too high but still far from the range where specific damage such as ion tracks appear [19]. In the case of dual-beam experiments, it is worth noting that we are interesting in creating a realistic damage in the zone where helium is implanted.…”

Section: Applicationmentioning

confidence: 99%

Evaluation of damage in neutron irradiated boron carbide

Gosset

Herter

Motte

2018

Nuclear Instruments and Methods in Physics Research Section B:

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When irradiated in a reactor, neutron absorber materials undergo two different damages induced, first, by the elastic scattering of neutrons; second by the neutron absorption reactions. In boron carbide irradiated in a fast neutron flux, neutron scattering and the slowing-down of He and Li arising from the (n,α) absorption reaction both lead to the displacement of B and C atoms which energy ranges up to a few MeV. Simulating the neutron damage by ion irradiation requires the calculation of the damage produced in both cases. In this paper we propose an estimation of the actual defect production rate resulting from the fast neutron irradiation. For this, we first estimate the energy spectra of both the primary knocked-on atoms and atoms created by the absorption reactions, here in a Phenix-like neutron spectrum. We then deduce from SRIM calculations the actual energy distribution of all the atoms displaced along the displacements cascades induced by those primary projectiles. At last, we obtain an estimation of the number of displaced atoms per produced helium, about 305, most of them resulting from neutron scattering. This is far from a Kinchin-Pease or NRT estimation, of the order of several thousands, this arising from the fact that most of the energy is dissipated through electronic interactions. Such results are then used in order to perform ion irradiations aiming at a realistic simulation of synergetic effects of helium implantation and damage production.

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Structural modifications induced by ion irradiation and temperature in boron carbide B4C

Cited by 24 publications

References 18 publications

Modeling and X-ray Analysis of Defect Nanoclusters Formation in B4C under Ion Irradiation

Modeling and X-ray Analysis of Defect Nanoclusters Formation in B4C under Ion Irradiation

Evolution of thermo-physical properties and annealing of fast neutron irradiated boron carbide

Evaluation of damage in neutron irradiated boron carbide

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