Structural, Morphological, and Optical Characterization of MoO3 Thin Films and MoO3/p-Si Based Diode

Mansour, A. M.; Gad, S. A.; Moustafa, A. M.; Mahmoud, G. M.

doi:10.1007/s12633-021-01014-6

Cited by 19 publications

(2 citation statements)

References 42 publications

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“…The estimated energies are listed in Table and infer the reduction in E o and E d caused by ion fluences. The obtained values of E o approximately satisfy the empirical relation E o ≈ 2 E g . The decrease in E o illustates the decrease in the interband transition and the increase in the intraband transition inside the system.…”

Section: Resultssupporting

confidence: 68%

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Priyadarshini¹,

Alagarasan

Ganesan

et al. 2022

ACS Appl. Opt. Mater.

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This study investigates the effects of 30 keV proton ion irradiation on the structural, morphological, and linear–nonlinear optoelectronic properties of Sb40Se20S40 thin films. The retention of an amorphous nature and vibrational bonding rearrangements caused by ion irradiation demonstrate structural tailoring. The cumulative decrease in roughness with an increase in ion dose decreases the surface energy and optical absorption loss. With the blue shifting of the absorption edges, proton irradiation increased the optical transmittance and reflectance. The variation of fluence changes the optical bandgap and Urbach energy, which are induced by local structural changes caused by defects and disorder. The refractive index decreased considerably, which supports the Moss rule. Proton irradiation reduced the interband transition and average band energy gap of the system. However, ion irradiation increased optical losses while decreasing optical conductivity and dielectric characteristics. The third-order nonlinear susceptibility and nonlinear refractive index decreased significantly as the fluence increased. Such materials with optical tuning capabilities via ion fluence are essential for cutting-edge photonic and optoelectronic applications.

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Section: Resultssupporting

confidence: 68%

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Priyadarshini¹,

Alagarasan

Ganesan

et al. 2022

ACS Appl. Opt. Mater.

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“…Molybdenum trioxide (MoO 3 ) is a layered (held together by weak van der Waals force) transition metal oxide with excellent chemical and thermal stability, a nontoxic nature, and low cost, in addition to valuable chemical properties such as multiple valences . α-MoO 3 is thermodynamically the most stable phase among the three polymorphic phases of MoO 3 in ambient conditions and has an orthorhombic crystal structure. , α-MoO 3 is an n-type semiconductor with a ∼ 3.2 eV wide band gap .…”

Section: Introductionmentioning

confidence: 99%

α-MoO₃ Microflakes Decorated with Gold Nanoislands as SERS-Active Substrates

Awasthi,

Dey,

Srivastava

et al. 2024

ACS Appl. Nano Mater.

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Surface-enhanced Raman spectroscopy (SERS) is an effective method that can be employed to detect analytes in ultratrace amounts precisely. The extensive development of noble-metal-based SERS detection has been done in the recent past. A hybrid of noble metals and semiconductors is highly effective in enhancing the Raman signal in addition to making it a stable, large-area, and low-cost SERS substrate, enabling the rapid growth of these heterostructures in SERS-based research areas. Defect engineering is a general approach to making a semiconductorbased SERS-active substrate. In this study, α-MoO 3 flakes obtained via a facile chemical vapor deposition process were decorated with gold nanoislands to access the synergetic contribution of localized surface plasmon resonance and the charge-transfer phenomenon, making it a metal−semiconductor (metal−metal oxide) heterostructure-based SERSactive substrate. Raman, X-ray diffraction, and field emission scanning electron microscopy measurements showed the formation of α-MoO 3 flakes. X-ray photoelectron spectroscopy analysis shows the increase in oxygen vacancies when α-MoO 3 flakes were annealed in an argon environment at 350 °C for an hour. Making use of this thermochromic property, the proposed heterostructure was prepared. α-MoO 3 flakes coated with a 10 nm thin gold film were annealed in a protective environment to produce oxygen defect-rich gold nanoisland-decorated α-MoO 3 flakes, making it possible to gain access to a dual enhancement mechanism via plasmons and charge transfer. It is highly sensitive, easy to fabricate and reproduce, stable, and a large-area SERS substrate. The proposed substrate demonstrated detection up to 10 −11 , 10 −10 , and 10 −9 M concentrations of rhodamine 6G, 2,4,6-trinitrotoluene, and thiram molecules, respectively.

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Synthesis and Characterization of Silver Nanoparticles-Coated Molybdenum Oxide Thin Films

Ahmed,

Rzaij

2024

Lecture Notes in Networks and Systems

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Structural, Morphological, and Optical Characterization of MoO3 Thin Films and MoO3/p-Si Based Diode

Cited by 19 publications

References 42 publications

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

α-MoO₃ Microflakes Decorated with Gold Nanoislands as SERS-Active Substrates

Synthesis and Characterization of Silver Nanoparticles-Coated Molybdenum Oxide Thin Films

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Structural, Morphological, and Optical Characterization of MoO3 Thin Films and MoO3/p-Si Based Diode

Cited by 19 publications

References 42 publications

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

α-MoO3 Microflakes Decorated with Gold Nanoislands as SERS-Active Substrates

Synthesis and Characterization of Silver Nanoparticles-Coated Molybdenum Oxide Thin Films

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Product

Resources

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Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

α-MoO₃ Microflakes Decorated with Gold Nanoislands as SERS-Active Substrates