Structural, morphological and optical properties of $$\hbox {In}_{2}\hbox {S}_{3}$$ In 2 S 3 thin films obtained by SILAR method

Comparative study of Sb2S3, Bi2S3 and In2S3 thin film deposition on TiO2 by successive ionic layer adsorption and reaction (SILAR) method

“…For example, in Table 2 the results [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] on a wide variety of thin films are presented and compared with the results obtained in this investigation. Regarding In 2 S 3 thin films, it is possible to observe similar features except for a blue-shift on band gap in the SILAR technique.…”

Optical and Electrical Properties of CH₃NH₃PbI₃ Perovskite Thin Films Transformed from PbO-PbI₂ Hybrid Films

“…Successive ionic layer adsorption and reaction (SILAR) technique for deposition of thin films is based on a heterogeneous reaction between adsorbed ions and solvated ions on the solidliquid interface. 14 With outstanding features of low-cost, the simplicity of procedure and high quality of obtaining films, SI-LAR technique has been widely applied to prepare kinds of semiconductor films, for instance PbS, 15 Cu2S, 16 CdS, 17 ZnO, 18 In2S3, 19 and the like, on various substrates. On the other hand, ultrasonic has been introduced to SILAR technique because of the nature of high energy field and cavitations 20 etc.…”