Structural, optical, and electrical characteristics of AlN:Ho thin films irradiated with 700 keV protons

Usman, Muhammad; Naeem, Muhammad; Hassan, Najam Ul; Maqbool, Muhammad; Ahmad, Iftikhar; Ahmad, Ishaq; Hussain, Zahid

doi:10.1016/j.apsusc.2015.09.033

Cited by 26 publications

(5 citation statements)

References 16 publications

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“…Similarly, phase transformation of thin film and nanostructured materials by ion beams is another important application. Ion beam-induced controlled modification of physical properties is possible in thin film and nanostructured materials [2][3][4][5][6][7][8]. Phase segregation and separation is another unique application of ion beam [9].…”

Section: Ion Beam Modification Of Materials Is An Important Applicatimentioning

confidence: 99%

Introductory Chapter: Ion Beam Applications

Ahmad¹,

Ezema²

2018

Ion Beam Applications

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Section: Ion Beam Modification Of Materials Is An Important Applicatimentioning

confidence: 99%

Introductory Chapter: Ion Beam Applications

Ahmad¹,

Ezema²

2018

Ion Beam Applications

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“…Furthermore, these semiconductors are also utilized as dielectric layers in optical storage media, and electronic substrate sterilization. Optical properties such as emission [ 14 ], resistivity [ 15 ], bandgap [ 16 ], reflectance [ 17 ], and transmittance will all be affected by introducing transition and rare-earth metals as impurities to the AlN matrix. Lanthanides with an oxidation number of +3 are compatible with III-V semiconductors and may be doped into the matrix of these materials.…”

Section: Introductionmentioning

confidence: 99%

A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

et al. 2022

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Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped AlN thin films by using DC and RF magnetron sputtering for optoelectronic applications. Additionally, a comparative analysis was also carried out on the as-deposited and annealed thin films. Several spectroscopy and microscopy techniques were considered for the characterization of structural (X-ray diffraction), morphological (SEM), chemical bonding (FTIR), and emission (PL spectroscopy) properties. The XRD results show that the thin films have an oriented c-axis hexagonal structure. SEM analysis validated the granular-like morphology of the deposited sample, and FTIR results confirm the presence of chemical bonding in deposited thin films. The photoluminescence (PL) emission spectra exhibit different peaks in the visible region when excited at different wavelengths. A sharp and intense photoluminescence peak was observed at 426 nm in the violet-blue region, which can be attributed to inter-band transitions due to the incorporation of Ni in AlN. Most of the peaks in the PL spectra occurred due to direct-band recombination and indirect impurity-band recombination. After annealing, the intensity of all observed peaks increases drastically due to the development of new phases, resulting in a decrease in defects and a corresponding increase in the crystallinity of the thin film. The observed structural, morphological, and photoluminescence results suggest that Ni: AlN is a promising candidate to be used in optoelectronics applications, specifically in photovoltaic devices and lasers.

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“…This doping of RE elements impacts the optical quality in visible light-emitting diodes and color flat panel displays. [6][7][8][9] It has been reported earlier that Gd is existing at a substitutional site within the matrix of AlN. [6][7][8][9][10] Due to the incomplete 4 f shell of the rare earth ions when excited, these orbitals result in sharp emission.…”

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confidence: 98%

“…[6][7][8][9] It has been reported earlier that Gd is existing at a substitutional site within the matrix of AlN. [6][7][8][9][10] Due to the incomplete 4 f shell of the rare earth ions when excited, these orbitals result in sharp emission. In contrast to hosts like GaN or Si, RE energy levels when doped into AlN higher reduction in thermal quenching is expected, by improving the potentialities of RE based systems for the petroleum industry, electroluminescent devices, flame detection, aerospace, and under-sea communications.…”

mentioning

confidence: 98%

“…The size of the RE ions is bigger than the AlN therefore changes in energy levels take place due to this mismatch in size. 7 It leads to intra 4 f emitting centers, thermal quenching which optimize and develop RE-based highly efficient optical devices. This doping of RE elements impacts the optical quality in visible light-emitting diodes and color flat panel displays.…”

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Fabrication and Ions Irradiation Study of AlN:Gd Thin Films

Ullah

Usman

Shah

et al. 2022

ECS J. Solid State Sci. Technol.

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Thin films of aluminum nitride (AlN) doped with gadolinium (Gd) were grown on Si (100) and Si (111) substrates, in pure nitrogen (N) atmosphere using reactive magnetron sputtering technique at room temperature. The as-grown thin films were irradiated by protons carrying 335 keV energy with a fluence of 1×1014ions/cm2. Rutherford backscattering spectroscopy (RBS) was carried out using a 2 MeV He++ beam to understand the stoichiometric and dimensional features of the thin films. Structural, electronic, optical, and electrical properties were investigated prior to and after the irradiation using, respectively, X-ray diffraction, Fourier transforms, infrared spectroscopy, diffuse reflectance spectroscopy, and four-probe point method. Stopping power and range of ions in matters was utilized to study the non-ionizing energy loss and Frenkel defect density/vacancies in AlN, caused by irradiation. Changes in the structural and enhancement in the optical and electrical characteristics of the films with implantation make AlN:Gd a good candidate for advanced electronics and optical technology.

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Structural, optical, and electrical characteristics of AlN:Ho thin films irradiated with 700 keV protons

Cited by 26 publications

References 16 publications

Introductory Chapter: Ion Beam Applications

Introductory Chapter: Ion Beam Applications

A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

Fabrication and Ions Irradiation Study of AlN:Gd Thin Films

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