Structural, Optical and Electrical Characterization of Polycrystalline Ga15Te85−xZnx Nano-Structured Thin Films

Khan, Shamshad A.; Tiwari, Gargi; Tripathi, Ravi P. N.; Alvi, Mohammed Ali; Khan, Zishan H.; Al-Agel, F.A.

doi:10.1166/asl.2014.5578

Cited by 5 publications

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“…We have calculated the absorption coefficient (α), Tauc's parameter, optical band gap, and extinction coefficient (k) from the absorption spectra of such films recorded by the UV/VIS spectrophotometer. The absorption coefficient can be evaluated by the given relation [52,53].…”

Section: Optical Analysis Of Se 85 Te 3 Bi 12 Nano-thin Filmsmentioning

confidence: 99%

Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se₈₅Te₃Bi₁₂ nano-thin films

Srivastava,

Khan,

Khan

2023

J. Phys. D: Appl. Phys.

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In this research work, we have synthesized non-crystalline Se85Te3Bi12 chalcogenide glasses by conventional melt quenching technique. The differential scanning calorimetry measurement of the synthesized specimen was done to confirm the glassy as well as non-crystalline nature of the bulk Se85Te3Bi12 alloy. The nano-thin films of thickness 30 nm of the synthesized sample at two different ambient argon pressures (1 Torr and 3 Torr) were made using the physical vapor condensation technique at a constant substrate temperature of 77 K using liquid nitrogen. The non-appearance of prominent peaks in the high-resolution x-ray diffractometer profile confirmed the non-crystalline nature of synthesized nano-thin films. The morphological analysis of the prepared nano-thin films using Field emission scanning electron microscopy confirmed the nanochalcogenide having particle size ranges from 30–90 nm. The Fourier transform infrared (FTIR) spectroscopy suggests the presence of moisture and carbon impurities in the prepared nano-thin films. The broad optical transmission shadow observed in the FTIR results is an essential requirement for new-generation IR systems. Based on UV-visible spectroscopy, optical parameters such as optical absorption coefficients, Urbach energy, optical band gaps, Tauc’s parameter and extinction coefficients were measured for synthesized Se85Te3Bi12 nano-thin films. The value of absorption coefficients, Tauc’s parameters, optical band gap and extinction coefficients increases with the increase of ambient argon pressure. The outcome of these studies recommends that these materials can be a preeminent candidate for photovoltaic applications. Photoluminescence spectroscopy results are accredited to the accumulation of non-crystalline nanochalcogenide particles on the substrates. DC conductivity measurements further confirm the semiconducting nature of the nanochalcogenide Se85Te3Bi12 thin films.

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Section: Optical Analysis Of Se 85 Te 3 Bi 12 Nano-thin Filmsmentioning

confidence: 99%

Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se₈₅Te₃Bi₁₂ nano-thin films

Srivastava,

Khan,

Khan

2023

J. Phys. D: Appl. Phys.

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“…Thus, efficient, energy-saving, and environmentally friendly methods must be developed to solve various pollution problems [1]. Among them, photocatalysis is a widely used technology in solar energy conversion and shows good potential [2,3]. Other available methods are sewage treatment [4,5] and dye degradation [6,7].…”

Section: Introductionmentioning

confidence: 99%

Preparation of Cu3N/MoS2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

et al. 2020

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Cu3N/MoS2 heterojunction was prepared through magnetron sputtering, and its optical band gap was investigated. Results showed that the prepared Cu3N/MoS2 heterojunction had a clear surface heterojunction structure, uniform surface grains, and no evident cracks. The optical band gap (1.98 eV) of Cu3N/MoS2 heterojunction was obtained by analyzing the ultraviolet-visible transmission spectrum. The valence and conduction band offsets of Cu3N/MoS2 heterojunction were 1.42 and 0.82 eV, respectively. The Cu3N film and multilayer MoS2 formed a type-II heterojunction. After the two materials adhered to form the heterojunction, the interface electrons flowed from MoS2 to Cu3N because the latter had higher Fermi level than the former. This behavior caused the formation of additional electrons in the Cu3N and MoS2 layers and the change in optical band gap, which was conducive to the charge separation of electrons in MoS2 or MoS2 holes. The prepared Cu3N/MoS2 heterojunction has potential application in various high-performance photoelectric devices, such as photocatalysts and photodetectors.

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Studies of Se85Te12Bi3 and Se85Te9Bi6 Nanochalcogenide Thin Films at Different Working Pressures

Srivastava,

Khan,

Khan

et al. 2023

Springer Proceedings in Materials

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Structural, Optical and Electrical Characterization of Polycrystalline Ga₁₅Te_85−xZn_x Nano-Structured Thin Films

Cited by 5 publications

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Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se₈₅Te₃Bi₁₂ nano-thin films

Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se₈₅Te₃Bi₁₂ nano-thin films

Preparation of Cu3N/MoS2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

Studies of Se85Te12Bi3 and Se85Te9Bi6 Nanochalcogenide Thin Films at Different Working Pressures

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Structural, Optical and Electrical Characterization of Polycrystalline Ga15Te85−xZnx Nano-Structured Thin Films

Cited by 5 publications

References 0 publications

Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se85Te3Bi12 nano-thin films

Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se85Te3Bi12 nano-thin films

Preparation of Cu3N/MoS2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

Studies of Se85Te12Bi3 and Se85Te9Bi6 Nanochalcogenide Thin Films at Different Working Pressures

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Structural, Optical and Electrical Characterization of Polycrystalline Ga₁₅Te_85−xZn_x Nano-Structured Thin Films

Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se₈₅Te₃Bi₁₂ nano-thin films

Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se₈₅Te₃Bi₁₂ nano-thin films