2021
DOI: 10.3390/coatings11070864
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Structural, Optical, and Electrical Properties of Copper Oxide Films Grown by the SILAR Method with Post-Annealing

Abstract: Copper oxides are widely used in photocatalysts, sensors, batteries, optoelectronic, and electronic devices. In order to obtain different material properties to meet the requirements of different application fields, varied technologies and process conditions are used to prepare copper oxides. In this work, copper oxide films were grown on glass substrates by a successive ionic layer adsorption and reaction (SILAR) method with subsequent annealing under an atmospheric environment. The films were characterized b… Show more

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Cited by 33 publications
(12 citation statements)
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“…The image from the SEM analysis displayed significant interparticle porosities which allowed the passage of vapor [34]. However, the size of the synthesized material (16.7 nm) is still within the nanometer range, but with a non-homogenous structure [35], while the film thickness was calculated to be 106.4 nm similar to previous studies of Lai et al [36], Shariffudin et al [37], and Lee & Wang [38]. From the SEM micrograph, it is obvious that the synthesized CuO was majorly composed of spherical agglomerates of CuO nanoparticles [39].…”
Section: Scanning Electron Microscope (Sem) Analysissupporting
confidence: 80%
“…The image from the SEM analysis displayed significant interparticle porosities which allowed the passage of vapor [34]. However, the size of the synthesized material (16.7 nm) is still within the nanometer range, but with a non-homogenous structure [35], while the film thickness was calculated to be 106.4 nm similar to previous studies of Lai et al [36], Shariffudin et al [37], and Lee & Wang [38]. From the SEM micrograph, it is obvious that the synthesized CuO was majorly composed of spherical agglomerates of CuO nanoparticles [39].…”
Section: Scanning Electron Microscope (Sem) Analysissupporting
confidence: 80%
“…The films involve CuO of monoclinic crystalline structures with lattice parameters a = 4.6833 Ǻ, b = 3.4208 Ǻ, c = 5.1294 Ǻ, and β = 99.567 • , according to the JCPDS cards [27]. The presence of CuO, as a predominant phase, is due to the film pre-annealing under air, which is known to convert Cu 2 O into CuO, as reported earlier [28]. Both signals at 2θ = 35.685 • and 38.862 • were assigned to (002) and (111) reflections of the monoclinic CuO phase, respectively.…”
Section: Structural Propertiessupporting
confidence: 53%
“…The signal at 2θ = 48 • refers to the (202) reflection in CuO (JCPDS card no. 48-1548) and [28]. No secondary phases due to SnO 2 or other Sn species can be observed, which indicates the incorporation of the dopant into the crystal lattice of CuO in a substitutional manner.…”
Section: Structural Propertiesmentioning
confidence: 94%
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“…Generally, these deposition methods could be divided into physical method and chemical techniques. Researchers highlighted that the chemical deposition method has many advantages such as inexpensive, and convenient for large area deposition [30][31][32].…”
Section: Introductionmentioning
confidence: 99%