Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rate

Fedala, Abdelkrim; Cherfi, Rabah; Aoucher, M.; Mohammed‐Brahim, Tayeb

doi:10.1016/j.mssp.2006.08.016

Cited by 12 publications

(6 citation statements)

References 12 publications

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“…A linear dependence of the H content vs. the sample position can be assigned for each sample. The higher the Si/Ge ratio, the higher the H content, in agreement with previous investigation up to a Ge concentration of 40 . We have also found that the lateral distribution of the Si/Ge ratio is not influenced by .…”

Section: Resultssupporting

confidence: 92%

“…In terms of the Si and Ge concentration ratio, besides reports dealing with the concentration dependent properties of c-Si 1−x Ge x 25,30,43,69 , there are also numerous studies that focus on amorphous compounds 40,50,[66][67][68][69][70][71][72][73][74] . Comprehensive parameterizations for both the photon energies and compositions were presented for crystalline materials, in many cases supported by density of states calculations 75 , also pointing out the Vegard's lawlike behavior 69 .…”

Section: Concentration Dependence Of the Dielectric Function The Amomentioning

confidence: 99%

“…There was a significant amount of scattering in the obtained data, due to the large dependence of the properties on the preparation parameters. Fedala et al measured optical gap values from 1.3 to 2.1 eV using absorption spectroscopy for compositions up to x = 0.6 , and an unknown crystallinity and partial pressure of H during magnetron sputtering 40 x Ge x prepared by low pressure chemical vapor deposition ranging from ≈0.8 to almost 2 eV, depending on the composition and on the method of evaluation 70 . They found n variations from ≈ 3.3 (Si) to ≈ 4.5 (Ge), in good agreement with our data for the p H /p = 0.2 case.…”

Section: Concentration Dependence Of the Dielectric Function The Amomentioning

confidence: 99%

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Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

Kalas

Zolnai

Sáfrán

et al. 2020

Sci Rep

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The optical parameters of hydrogenated amorphous a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ Si 1 - x Ge x :H layers were measured with focused beam mapping ellipsometry for photon energies from 0.7 to 6.5 eV. The applied single-sample micro-combinatorial technique enables the preparation of a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ Si 1 - x Ge x :H with full range composition spread. Linearly variable composition profile was revealed along the 20 mm long gradient part of the sample by Rutherford backscattering spectrometry and elastic recoil detection analysis. The Cody-Lorentz approach was identified as the best method to describe the optical dispersion of the alloy. The effect of incorporated H on the optical absorption is explained by the lowering of the density of localized states in the mobility gap. It is shown that in the low-dispersion near infrared range the refractive index of the a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_x$$ Si 1 - x Ge x alloy can be comprehended as a linear combination of the optical parameters of the components. The micro-combinatorial sample preparation with mapping ellipsometry is not only suitable for the fabrication of samples with controlled lateral distribution of the concentrations, but also opens new prospects in creating databases of compounds for optical and optoelectonic applications.

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Section: Resultssupporting

confidence: 92%

Section: Concentration Dependence Of the Dielectric Function The Amomentioning

confidence: 99%

Section: Concentration Dependence Of the Dielectric Function The Amomentioning

confidence: 99%

See 1 more Smart Citation

Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

Kalas

Zolnai

Sáfrán

et al. 2020

Sci Rep

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“…It has a high optical absorption coefficient for a visible light but not effective for a long wavelength light, which means that a great part of the solar energy cannot be absorbed and the conversion efficiency is limited for the photovoltaic layer of the bottom cell of stacked structure solar cell. To overcome the problem, the hydrogenated amorphous silicon-germanium (a-SiGe:H) alloys has been widely investigated [1][2][3][4][5]. The main advantage of this material is that its optical gap can be easily tuned (narrow bandgap) to match the longer wavelength range by controlling the Ge content.…”

Section: Introductionmentioning

confidence: 99%

Raman scattering and electrical characterizations studies of hydrogenated amorphous silicon–germanium alloys prepared by 40MHz plasma-enhanced CVD

Chen¹,

Fang²,

Yeh³

2011

Journal of Non-Crystalline Solids

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“…Extensive research on hydrogenated amorphous silicongermanium (a-Si 1−x Ge x :H) films has been carried out using various techniques [4,5,[10][11][12][13] for preparing a competitive material in many applications of optoelectronic devices [14,15].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of :H Thin Films Prepared by Thermal Evaporation Method

Al-Douri

Alias

Alnajjar

et al. 2010

Advances in Condensed Matter Physics

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Thin a-:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the :H thin films as pure, doped with 3.5% of Al (p-type) and that doped with 3.5% As (n-type), were proposed.

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Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rate

Cited by 12 publications

References 12 publications

Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

Raman scattering and electrical characterizations studies of hydrogenated amorphous silicon–germanium alloys prepared by 40MHz plasma-enhanced CVD

Electrical and Optical Properties of :H Thin Films Prepared by Thermal Evaporation Method

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