“…In the past few decades, tin oxide (SnO 2 ), as a promising semiconductor material, has gained significant attention due to the excellent photoelectric properties, such as high transparency, suitable band gap and band structure, and superior electron mobility. In recent works, there are abundant techniques to prepare the SnO 2 thin films, including magnetron sputter deposition (MSD) [ 1 , 2 , 3 , 4 ], thermal evaporation [ 5 ], spray pyrolysis deposition [ 6 , 7 ], sol–gel process [ 8 , 9 , 10 , 11 ], and chemical vapor deposition (CVD) [ 12 , 13 , 14 , 15 ]. However, these technologies still have many shortcomings such as poor coverage, presence of pinholes, and the uncontrolled defects.…”