2013
DOI: 10.1016/j.optmat.2013.01.037
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Structural, optical and light scattering properties of post etched RF sputtered ZnO:Al thin films deposited at various substrate temperature

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Cited by 33 publications
(12 citation statements)
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“…2b until desirable nano etching masks were formed. The samples were then etched by RIE (Allwin21 Corp, Tegal 903e) with reaction gases of CHF 3 , SF 6 After the ICP-CVD deposition process, the optical properties of SiN x film were characterized by spectroscopic ellipsometer (J.A. Woollam, M2000D) and the results are shown in Fig.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…2b until desirable nano etching masks were formed. The samples were then etched by RIE (Allwin21 Corp, Tegal 903e) with reaction gases of CHF 3 , SF 6 After the ICP-CVD deposition process, the optical properties of SiN x film were characterized by spectroscopic ellipsometer (J.A. Woollam, M2000D) and the results are shown in Fig.…”
Section: Methodsmentioning
confidence: 99%
“…However, high surface reflection and high surface recombination significantly impact the conversion efficiency. Recently, application of surface antireflection (AR) to Si-based thin film solar cells by using multilayer graded refractive index AR coating [4] or by transparent conducting oxide (TCO) coating followed by surface texturing [5,6] have been reported. However, the former method may cause the issue related to the device's stability, as well as the issue related to the fact that AR coating becomes less effective for larger angular antireflection incident beams [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…At present, there are many different methods to prepare ZnO, for instance, chemical vapor deposition (CVD) and spray pyrolysis, etc. But they are expensive and complex which are not suitable for industrial production [6]. On the other hand, chemical bath deposition (CBD) is a better choice due to its lower cost and simpler requirement for equipment.…”
Section: Introductionmentioning
confidence: 99%
“…Group-III elements (B, Al, Ga, In) are the most common dopants; they act as effective donors; they are used to enhance the electrical properties of ZnO films A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT 4 [6,8,9]. Dopant atoms that incorporate into ZnO films replace Zn host atoms increasing free electron density.…”
Section: Introductionmentioning
confidence: 99%
“…Ga is a good dopant because it is less reactive with oxygen and has less moisture resistance than other dopants [9].…”
Section: Introductionmentioning
confidence: 99%