Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells

Hichou, A. El; Addou, M.; Mansori, Mohammed; Ebothé, J.

doi:10.1016/j.solmat.2008.12.014

Cited by 25 publications

(7 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For InN, the variation in photon attenuation length with excitation energy is shown in Figure d . The authors in ref reported the cathodoluminescence spectra of fluorine-doped c-In 2 O 3 , which matches well with our spectra, but they were not able to measure the spectra lower than 330 nm and higher than 975 nm because of instrumental limitations. They observed two broad peaks at 410 and 650 nm and claimed that the origin of the former peak corresponds the indirect conduction band to the valence band transition of c-In 2 O 3 and the 650 nm peak originates from oxygen defects.…”

Section: Resultssupporting

confidence: 86%

“…In this analysis the center position of all Gaussians remained constant for each excitation energy. Note that the luminescence feature of c-In 2 O 3 at around 667 nm is due to oxygen defects. − It is shown that the c-In 2 O 3 luminescence spectrum is present for all excitation energies, and its intensity is almost identical for all excitation energies (for different attenuation lengths), indication with presence of c-In 2 O 3 throughout the InN samples. From the fitting, a small g 3 Gaussian feature is observed in the same position (at 651 nm) of the luminescence spectrum of c-In 2 O 3 .…”

Section: Resultsmentioning

confidence: 91%

See 1 more Smart Citation

Bandgap and Electronic Structure Determination of Oxygen-Containing Ammonothermal InN: Experiment and Theory

et al. 2019

View full text Add to dashboard Cite

The electronic structure and band gap of InN synthesized by the ammonothermal method are studied by synchrotron-based soft X-ray absorption spectroscopy (XAS), emission spectroscopy (XES), X-ray excited optical luminescence (XEOL) spectroscopy, and density functional theory (DFT). The measured N K-edge XAS and XES spectra and XEOL spectra are used to estimate the band gap of InN, and it is found to be 1.7 ± 0.2 eV for both independent measurements, which is close to the initially reported values in the range of 1.89–2.10 eV for polycrystalline InN and about twice the value recently obtained for single crystalline thin films between 0.70 and 1.0 eV. The possible origin of the measured increased band gap is discussed in terms of the presence of oxygen impurities and other impurity phases. Oxygen K-edge XES and XAS measurements are performed and reveal the presence of oxygen impurities. To gain insight into the structure of InN in the presence of oxygen impurities, we perform DFT calculations for hypothetical Wurtzite-type InO0.5N0.5 and InO0.0625N0.9375 and the known c-In2O3 and find that the measured O K-edge spectra of the samples agree well with InO0.0625N0.9375. The XEOL measurements also confirm the presence of oxygen impurities, which are caused by substituting nitrogen atoms with oxygen atoms, and the impurity phase of In2O3 in the samples.

show abstract

Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 91%

Bandgap and Electronic Structure Determination of Oxygen-Containing Ammonothermal InN: Experiment and Theory

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Two of these PL bands (with the peaks near 2 and 3 eV) are not associated with the recombination in the synthesized silicon suboxide as they dominate in the photoluminescence spectrum of the sample with In particles after the H 2 plasma treatment (see 6 curve on Figure , inset). According to the literature data, these PL bands correspond to the transitions in the In 2 O 3 , which indicates the formation of the In 2 O 3 and is in complete agreement with the results of the X‐ray EDS analysis mentioned above. It should be noted that the PL bands from In 2 O 3 nanoparticles are best resolved in the structures with silicon suboxide films.…”

Section: Resultssupporting

confidence: 89%

Indium‐Assisted Plasma‐Enhanced Low‐Temperature Growth of Silicon Oxide Nanowires

Khmel

Баранов

Barsukov

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

The nanowires of the silicon oxide SiOx (x ≤ 2) are synthesized on an indium catalyst by the gas‐jet electron beam plasma chemical vapor deposition (GJ EBP CVD) method using a monosilane‐argon‐hydrogen mixture with the simultaneous supply of the oxygen into the vacuum chamber. The arrays of the aligned microropes (bundles) of nanowires are formed at the substrate temperatures of 200–335 °С. At the temperature of 160 °С the cocoon‐like structures of SiOx nanowires are synthesized. The obtained results are explained within the synthesis model suggested previously. The Fourier transform infrared (FTIR) transmittance spectra are recorded to study the chemical composition of the nanowires. It is shown that the nanowires synthesized at temperatures of 200–335 °С consist of SiOx with x = 1.93 ± 0.04. The arrays of the oriented microropes of the SiOx nanowires exhibit the intense photoluminescence at a room temperature with a maximum in a range of the energies from 2 to 3 eV. The photoluminescence spectra of the oriented microropes synthesized on silicon substrates with the indium catalyst are shifted toward lower energies from 2.7–2.8 to 2.4–2.5 eV at the changing growth temperatures from 200 to 335 °C.

show abstract

“…[http://dx.doi.org/10.1063/1.4875457] Indium tin oxide (ITO) or Sn doped In 2 O 3 nanowires (NWs) are important as transparent conducting oxides (TCOs) for the fabrication of solar cells, [1][2][3] flexible displays, 4 and ultra violet light emitting diodes [5][6][7][8][9] because it has been suggested that higher Sn doping levels and conductivities can be attained in ITO NWs compared to bulk ITO. So far ITO NWs have been grown by carbothermal reduction of In 2 O 3 and SnO 2 5 but the control of stoichiometry is not trivial as it has been observed that SnO 2 NWs may be obtained even when a higher content of In 2 O 3 is used during carbothermal reduction carried out under an inert gas flow at elevated temperatures 10,11 which also leads to the non-intentional incorporation of carbon.…”

confidence: 99%

Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

et al. 2014

View full text Add to dashboard Cite

Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at 800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO2 and suppression of In2O3 permitting compositional and structural tuning from SnO2 to In2O3 which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position.

show abstract

Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells

Cited by 25 publications

References 30 publications

Bandgap and Electronic Structure Determination of Oxygen-Containing Ammonothermal InN: Experiment and Theory

Bandgap and Electronic Structure Determination of Oxygen-Containing Ammonothermal InN: Experiment and Theory

Indium‐Assisted Plasma‐Enhanced Low‐Temperature Growth of Silicon Oxide Nanowires

Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

Contact Info

Product

Resources

About