“…This strain can significantly cause the lattice distortion and degradation in ZnO crystal growth. Similar behavior in the degradation of crystallinity due to metal dopants such as Eu, [26] Ce [27] , and Al [28] has been observed in previous research works.…”
Herein, undoped and antimony (Sb)‐doped zinc oxide (ZnO) thin films are prepared by a sol–gel spin‐coating method. The influence of different annealing atmospheres including nitrogen and argon on pertinent properties of the prepared films is scrutinized. Structural, optical, morphological, and electrical properties of all annealed films are investigated by X‐ray diffraction (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), X‐ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), ultraviolet–visible spectroscopy, and current–voltage measurement. The XRD results exhibit that the films possess ZnO hexagonal wurtzite without impurity. The deterioration in the crystallinity of the film is highly influenced by Sb dopant and annealing atmosphere exhibiting the decrease in nanoparticle size after annealing in nitrogen, argon atmosphere, and upon doping. XPS results confirm that Sb3+ is well incorporated in ZnO lattice and the shift of XPS spectra in the films annealed in nitrogen atmosphere indicates nitrogen bonding with zinc. The PL spectra exhibit blueshift of near band edge emission due to the Sb dopant substituting in Zn site in ZnO lattice and red‐infrared emission induced by Sb dopant. The decrease in electrical resistance of ZnO film can be obtained by Sb doping and annealing in nitrogen atmosphere.
“…This strain can significantly cause the lattice distortion and degradation in ZnO crystal growth. Similar behavior in the degradation of crystallinity due to metal dopants such as Eu, [26] Ce [27] , and Al [28] has been observed in previous research works.…”
Herein, undoped and antimony (Sb)‐doped zinc oxide (ZnO) thin films are prepared by a sol–gel spin‐coating method. The influence of different annealing atmospheres including nitrogen and argon on pertinent properties of the prepared films is scrutinized. Structural, optical, morphological, and electrical properties of all annealed films are investigated by X‐ray diffraction (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), X‐ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), ultraviolet–visible spectroscopy, and current–voltage measurement. The XRD results exhibit that the films possess ZnO hexagonal wurtzite without impurity. The deterioration in the crystallinity of the film is highly influenced by Sb dopant and annealing atmosphere exhibiting the decrease in nanoparticle size after annealing in nitrogen, argon atmosphere, and upon doping. XPS results confirm that Sb3+ is well incorporated in ZnO lattice and the shift of XPS spectra in the films annealed in nitrogen atmosphere indicates nitrogen bonding with zinc. The PL spectra exhibit blueshift of near band edge emission due to the Sb dopant substituting in Zn site in ZnO lattice and red‐infrared emission induced by Sb dopant. The decrease in electrical resistance of ZnO film can be obtained by Sb doping and annealing in nitrogen atmosphere.
“…On the other hand, due to prior treatment of ZnO sol-gels with increasing amounts of citrate counteractants, the interaction of the citrate ions with MEA neutralizes the stabilizer’s charges which in turn contribute to nanoparticle agglomeration. Thus, the resulting larger sized ZnO nanoparticles curbs the influence of quantum confinement effects 24,41,42 .Figure 8Diagram of Tauc plot ( αhv ) 2 vs hv and respective band gap energy values (eV).…”
Detection of host integrated viral oncogenes are critical for early and point-of-care molecular diagnostics of virus-induced carcinoma. However, available diagnostic approaches are incapable of combining both cost-efficient medical diagnosis and high analytical performances. To circumvent this, we have developed an improved IDE-based nanobiosensor for biorecognition of HPV-16 infected cervical cancer cells through electrochemical impedance spectroscopy. The system is fabricated by coating gold (Au) doped zinc oxide (ZnO) nanorods interfaced with HPV-16 viral DNA bioreceptors on top of the Interdigitated Electrode (IDE) chips surface. Due to the concurrently improved sensitivity and biocompatibility of the designed nanohybrid film, Au decorated ZnO-Nanorod biosensors demonstrate exceptional detection of HPV-16 E6 oncogene, the cancer biomarker for HPV infected cervical cancers. This sensor displayed high levels of sensitivity by detecting as low as 1fM of viral E6 gene target. The sensor also exhibited a stable functional life span of more than 5 weeks, good reproducibility and high discriminatory properties against HPV-16. Sensor current responses are obtained from cultured cervical cancer cells which are close to clinical cancer samples. Hence, the developed sensor is an adaptable tool with high potential for clinical diagnosis especially useful for economically challenged countries/regions.
“…Among them, zinc oxide is an n-type semiconductor which presents new properties when doping with appropriate group III elements (Al, Ga, In, etc.) [4]. Based on the reported works of the doping effect of ZnO, Al element is considered as a suitable choice for dopant materials in terms of its availability, non-toxicity, more resistant to oxidation, Al ions which have a similar ionic radius compared to Zn, resulting in small zinc oxide lattice deformations, less reactive [4,5], etc.…”
Section: Introductionmentioning
confidence: 99%
“…[4]. Based on the reported works of the doping effect of ZnO, Al element is considered as a suitable choice for dopant materials in terms of its availability, non-toxicity, more resistant to oxidation, Al ions which have a similar ionic radius compared to Zn, resulting in small zinc oxide lattice deformations, less reactive [4,5], etc. Therefore, Al-doped ZnO (AZO) is one of the best n-type oxide materials reported to date to be an effective ITO alternative to enhance the microstructure, electrical and optical properties for various applications such as fabrication of photonics and optoelectronic devices [6−8], phthalocyanine-based organic photovoltaics [9].…”
Section: Introductionmentioning
confidence: 99%
“…Improved properties have been reported for Al doping in ZnO nanoparticles. Islama et al [4] reported the structural, optical and photocatalysis properties of sol-gel deposited Al-doped ZnO. The results showed that thin films with better photocatalytic activity compared to the undoped ZnO films.…”
Group III elements doping for zinc oxide is currently attracting much attention for the study of absorber layer in nano-optoelectronic and photovoltaic devices as an alternative route to indium tin oxide (ITO) due to their optimized properties. In this report, Al-doped ZnO (AZO, Al: 1−7 at%) nanoparticles have been successfully deposited onto glass substrates using sol-gel process, and investigated by techniques such as X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The coated ZnO:Al nanoparticles at Al concentration up to 5 at% showed a nanosized polycrystalline structure with a c-plane preferred orientation. In AZO (7 at%), lower diffraction peaks were observed. The crystallite size calculated from XRD was ranged 38.7−43.5 nm. SEM showed spherical nanoparticles in shape with a smooth surface. The Raman results provided peaks located at 434, 435, 559, 851, and 1090 cm −1. According to XPS, the as-grown nanoparticles present the most intense peak located at about 1021.8 eV, assigned to the Zn 2p 3/2 corresponding to zinc oxide. It was concluded that the structural properties of AZO thin films were improved with Al (5 at%), and these samples may be considered as an alternative of costly ITO in thin-film photovoltaic applications.
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