Structural Optimization of Wavy FinFET for Leakage Reduction and Performance Enhancement

Chakkikavil, Anju; Kuruvilla, Nisha; Khan, Ayoob; Hameed, Shahul

doi:10.25046/aj0203114

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…Anju et al in 2019, [48] Implemented a FinFET architecture with a wavy design on a SOI substrate, incorporating an ultra-thin layer. Wavy FinFET emerges as a novel hybrid device that has improved current driving capability and provides high density While avoiding any compromise on the device's spatial efficiency.…”

Section: B Advancement Of Finfet Architecturesmentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

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This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

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Section: B Advancement Of Finfet Architecturesmentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

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An investigation on wavy FinFETs with a combination of optimization methods

Khan¹,

Hameed²

2020

Proceedings of the International Conference on Microelectronics, Signals and Systems 2019

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Multi-Channel Step FinFET With Spacer Engineering

Das,

James

2024

IEEE Access

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Multi-channel FinFET (M ch -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have examined the performance of the multi-channel-based step FinFET (M chstep FinFET) structure with spacer engineering. The results obtained from this simulation work indicate that M ch -step FinFET is a good competitor for future improvisation of CMOS technology. The proposed device has improved drain conductivity, transconductance (G m ), intrinsic gain (A v ), and drain conductance (G d ) performance by introducing high-K dielectric spacer material by 38.2%,46.12%, 88.57%, and 22.55%, respectively. The proposed device with a spacer is preferable to obtain better performance regarding ON current and device efficiency.INDEX TERMS Semiconductor device, Short Channel effect (SCE), Subthreshold swing (SS), Bipolar Junction transistor (BJT).

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Structural Optimization of Wavy FinFET for Leakage Reduction and Performance Enhancement

Abstract: Wavy FinFET is a hybrid device that integrates FinFET and Ultrathin 44.19% and 28.25% respectively.

Cited by 3 publications

References 11 publications

FinFET to GAA MBCFET: A Review and Insights

FinFET to GAA MBCFET: A Review and Insights

An investigation on wavy FinFETs with a combination of optimization methods

Multi-Channel Step FinFET With Spacer Engineering

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