Structural Phase Transitions in  Zr-Rich Lead Zircon Titanate by Raman Scattering

Kojima, Seiji; Dong, Xianling

doi:10.1143/jjap.37.5400

Cited by 16 publications

(10 citation statements)

References 17 publications

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“…The decreasing mode intensity with increasing temperature reflects a phase transition near 523 K. This mode has been associated with the anti-ferroelectric (orthorhombic) to ferroelectric (rhombohedral) phase transition at 507 K in PZ single crystal 73 and PbZr 0.95 Ti 0.05 O 3 ceramics. 74 The temperature-dependent micro-Raman results therefore confirm the intermediate ferroelectric phase in PZ films as observed in our polarization measurements.…”

Section: B-site Substitution In Pbtiosupporting

confidence: 87%

Studies on ferroelectric perovskites and Bi‐layered compounds using micro‐Raman spectroscopy

Dobal

Katiyar

2002

J Raman Spectroscopy

226

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and their solid solutions useful in a broad range of device applications. Various factors that influence the material properties such as particle size, stresses, stoichiometry, compositional homogeneity and their effects on phase transition were investigated. The processing conditions, A-and B-site substitution, size-dependent Raman spectra and the structure-property correlations are discussed in the bulk, thin film and nano-crystalline forms of these materials. A film thickness dependence stress study on lead titanate (PT) and lead zirconate titanate (PZT) films indicated that the nature of stress depends strongly on the lattice parameters of the film and substrate. The size effect was found to decrease the ferroelectric transition temperature in lead-based perovskite materials. Both ionic charge and radii induced changes in the Raman spectra of A-and B-site substituted perovskites and layered compounds were studied. A-site substitution in strontium bismuth tantalite (SBT) was found to induce a relatively linear variation of transition temperature compared with the B-site substituted SBT.Raman spectra of layered compounds and their solid solutions exhibited a strong dependence on dopants resulting in structural modifications.

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Section: B-site Substitution In Pbtiosupporting

confidence: 87%

Studies on ferroelectric perovskites and Bi‐layered compounds using micro‐Raman spectroscopy

Dobal

Katiyar

2002

J Raman Spectroscopy

226

View full text Add to dashboard Cite

show abstract

“…This mode has been associated with the antiferroelectric ͑orthorhombic͒ to ferroelectric ͑rhombo-hedral͒ phase transition at 234°C in PZ single crystal 17 and PbZr 0.95 Ti 0.05 O 3 ceramics. 18 The low-frequency ( Ͻ100 cm Ϫ1 ) PZ modes are very sensitive to temperature and reflect a ferroelectric rhombohedral to paraelectric cubic phase at about 245°C in bulk material. 17,18 These modes were not resolved in the Raman spectra of the PZ films due to quasielastic scattering.…”

mentioning

confidence: 99%

“…18 The low-frequency ( Ͻ100 cm Ϫ1 ) PZ modes are very sensitive to temperature and reflect a ferroelectric rhombohedral to paraelectric cubic phase at about 245°C in bulk material. 17,18 These modes were not resolved in the Raman spectra of the PZ films due to quasielastic scattering. The changes near the rhombohedral to cubic phase transition temperature, therefore, are not distinct in the film spectra.…”

mentioning

confidence: 99%

Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films

Dobal

Katiyar

Bharadwaja

et al. 2001

Applied Physics Letters

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Antiferroelectric materials are found to be good alternative material compositions for high-charge-storage devices and transducer applications. Lead zirconate ͑PZ͒ is a room-temperature antiferroelectric material. The antiferroelectric nature of PZ thin films was studied over a temperature range of 24-300°C, in terms of Raman scattering, dielectric constant, and polarization. Temperature-dependent dielectric and polarization studies indicated a nonabrupt phase transition. To alleviate the extrinsic effects influencing the phase transition behavior, Raman scattering studies were done on laser-ablated PZ thin films as a function of temperature and clear phase transformations were observed.

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“…This mode has been associated with the antiferroelectric ͑orthorhombic͒ to ferroelectric ͑rhombohedral͒ phase transition at 234°C in PZ single crystals 35 and PbZr 0.95 Ti 0.05 O 3 ceramics. 36 The lowfrequency (Ͻ100 cm Ϫ1 ) PZ modes are very sensitive to the temperature and reflect a ferroelectric rhombohedral to paraelectric cubic phase at about 245°C in bulk material. 35,36 These modes were not resolved in Raman spectra of the present set of La-modified PZ films due to the quasielastic scattering.…”

Section: Dielectric and Polarization Hysteresis Propertiesmentioning

confidence: 99%

“…36 The lowfrequency (Ͻ100 cm Ϫ1 ) PZ modes are very sensitive to the temperature and reflect a ferroelectric rhombohedral to paraelectric cubic phase at about 245°C in bulk material. 35,36 These modes were not resolved in Raman spectra of the present set of La-modified PZ films due to the quasielastic scattering. The changes near the rhombohedral to cubic phase-transition temperature, therefore, are not distinct in the film spectra.…”

Section: Dielectric and Polarization Hysteresis Propertiesmentioning

confidence: 99%

ac transport studies of La-modified antiferroelectric lead zirconate thin films

et al. 2002

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In recent times antiferroelectric thin-film material compositions have been identified as one of the most significant thin films for development of devices such as high charge storage, charge couplers/decouplers, and high strain microelectromechanical systems. Thus, understanding the dielectric and electrical properties under an ac signal drive in these antiferroelectric thin-film compositions, such as lead zirconate thin films, and the effect of donor doping on them is very necessary. For this purpose, thin films of antiferroelectric lead zirconate and La-modified lead zirconate thin films with mole % concentrations of 0, 3, 5, and 9 have been deposited by pulsed excimer laser ablation. The dielectric and hysteresis properties have confirmed that with a gradual increase of the La content, the room-temperature antiferroelectric lead zirconate thin films can be modified into ferroelectric and paraelectric phases. ac electrical studies revealed that the polaronic related hopping conduction is responsible for the charge transport phenomenon in these films. With a La content of р3 mole % in pure lead zirconate, the conductivity of the films has been reduced and followed by an increase of its conductivity for a у3% addition of La to lead zirconate thin films. The polaronic activation energies are also found to follow a similar trend as that of the conductivity.

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Structural Phase Transitions in Zr-Rich Lead Zircon Titanate by Raman Scattering

Cited by 16 publications

References 17 publications

Studies on ferroelectric perovskites and Bi‐layered compounds using micro‐Raman spectroscopy

Studies on ferroelectric perovskites and Bi‐layered compounds using micro‐Raman spectroscopy

Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films

ac transport studies of La-modified antiferroelectric lead zirconate thin films

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