Structural, photophysical and optoelectronic activity of triphenylamine-based push–pull chromophores: a theoretical study

Yahya, Mohamed; Suvitha, A.; Bouzıanı, Asmae

doi:10.1007/s11082-022-04239-w

Opt Quant Electron

2022

DOI: 10.1007/s11082-022-04239-w

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Structural, photophysical and optoelectronic activity of triphenylamine-based push–pull chromophores: a theoretical study

Mohamed Yahya

A. Suvitha²,

Asmae Bouzıanı³

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Cited by 2 publications

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“…[28][29][30][31][32][33][34] Triphenylamine-based compounds have also been developed for various optoelectronic devices. 30,[35][36][37][38][39][40] However, only a small selection of these have been studied in the context of the effect of using TPA compound as an interfacial layer on the structural and optical properties of Metal/p-Si or Metal/n-Si thin film. 41,42 In this work, we investigate the electrical and photo response properties of Al/p-Si/TPA/Al diode by using experimental current and voltage characteristics measured at different illumination intensities.…”

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confidence: 99%

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

Çavdar

Izmirli

Koralay

et al. 2023

ECS J. Solid State Sci. Technol.

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Organic semiconductors provide many advantages in diode fabrication due to their variable electrical properties, flexibility and easy and cheap production processes. In this study, triphenylamine (TPA) organic compound was used for the Al/p-Si/TPA/Al Schottky structure. The effect of the triphenylamine on the electrical properties of the produced diode was studied by current-voltage measurements in dark and under various illumination intensities. The main electrical parameters such as barrier height (ΦB), ideality factor (n), series resistance (R s), and interface state density (N ss) were obtained from the I-V characteristics. The n, Φ B and R s values of the diode were found as 1.88, 0.80 eV and 2195 Ω for dark, and 3.96, 0.71 eV and 17 Ω for 100 mW cm−2 illumination intensity. Besides, the fabricated device exhibited photodiode behavior as obtained from the photocurrent measurement for the diode, depending on the illumination intensity. Additionally, it was found that the Al/p-Si/TPA/Al diode had a higher photocurrent (I ph ) in illuminated conditions than in dark conditions. The main photovoltaic parameters such as open circuit voltage (V oc ) and short circuit current (I sc ) were also investigated. Photo-responsivity and response time (τ r, τ d) of the diode was obtained as 0,015 A W−1 and 800 ms respectively. All these results show that the Al/p-Si/TPA/Al diode has potential in optoelectronic device applications.

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mentioning

confidence: 99%

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

Çavdar

Izmirli

Koralay

et al. 2023

ECS J. Solid State Sci. Technol.

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Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure

Çavdar,

Oruç,

Eymur

et al. 2024

J Mater Sci: Mater Electron

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Abstractn-TPA-IFA organic material was synthesized and deposited on p-Si by spin coating method to produce n-TPA-IFA/p-Si heterojunction diode. We determined that the dielectric constant and energy band gap of TPA-IFA organic material were 3.91 and 3.37 eV by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W, respectively, and the carrier type of TPA-IFA organic semiconductor material was also n-type at room temperature from temperature-dependent hall effect measurements. Using forward and reverse bias I–V measurements in the dark and under various light intensities, we examined the key electrical characteristics of the n-TPA-IFA/p-Si heterojunction diode, including $${\Phi }_{b}$$ Φ b and $$n$$ n . It was determined that the rectification ratio (RR) was approximately 104. The reverse current's observed increasing behavior with increasing light indicates that the produced heterojunction diode can be utilized as a photodiode, detector, or sensor. The values of n, $${\Phi }_{b}$$ Φ b , and Io were determined using I–V data in dark as 1.34, 0.91 eV, and 7.25 9 10–12 A, respectively. On the other hand, when the n-TPA-IFA/p-Si heterojunction diode is exposed to 100 mW/cm2 illumination, these parameters were obtained as 1.85, 0.80 eV, and 5.11 9 10–10 A, respectively. Photovoltaic parameters such as short circuit current (Isc) and open circuit voltage (Voc) were determined as 0.018 mV, 0.08 A and 0.050 mV, 0.29 A under 20 mW/cm2 light and 100 mW/cm2 light intensity, respectively. The photodetector properties of n-TPA-IFA/p-Si heterostructure were explored at different light intensities, and the photoresponsivity (R), photosensitivity (PS), specific detectivity ($${D}^{*}$$ D ∗ ), and linear dynamic range (LDR) of the heterojunction changed with reverse voltage and light intensity. It was found that as light intensity increased, the linear dynamic range (LDR), a crucial characteristic for image sensors, increased as well (10.15 dB and 18.84 dB for 20 and 100 mW/cm2).

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Structural, photophysical and optoelectronic activity of triphenylamine-based push–pull chromophores: a theoretical study

Cited by 2 publications

References 47 publications

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure

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