Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

Study of thulium doping effect and enhancement of photocatalytic activity of rutile TiO2 nanoparticles

“…The most intense contribution is assigned to the O 2À in the TiO 2 lattice. Another contribution at 530.8 eV is assigned to the O 2À in the Tm 2 Ti 2 O 7 pyrochlore lattice [52]. The other contributions are assigned to adsorbed species, such as hydroxyl groups or water [53,54].…”

Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

“…Dysprosium and dysprosium oxide have been materials of interest for a long time [1][2][3][4][5][6][7][8][9] as dysprosium is a lanthanide metal with the largest magnetic moment and susceptibility. 2 In addition, combination of polymeric architectures with dysprosium ions can produce hybrid materials with extremely rich properties.…”

“…Dysprosium oxide has been considered as a candidate of high-permittivity (high-k) capacitor dielectric for nonvolatile memory applications 3 and as a high-k gate dielectric. [4][5][6] Regarding the performance of Dy 2 O 3 as essentially a paramagnetic oxide, standards in the form of Dy 2 O 3 powders have been exploited for quantum interference magnetometer, 7 vibrating sample magnetometer (VSM), 8 or in the form of small single crystals as additive seeds for superconducting materials for a susceptometer. 9 Dysprosium-doped polymers and glasses can emit white light, 10,11 while Dy:PbGa 2 S 4 compound has been shown to be a solid state laser material emitting at 4.32 lm when pumped by 1.7 lm laser diodes.…”

Electrical characterization of MIS capacitors based on Dy<inf>2</inf>O<inf>3</inf>-doped ZrO<inf>2</inf> dielectrics

“…Rare earth (RE) oxide based materials have also been studied for both logic and memory applications because of their high permittivity values, large band gaps and better stability when deposited directly on silicon. Dysprosium oxide (DY203) is one of the RE oxides studied [5][6]. It has a dielectric constant value ranging from 14 to 18, an energy band gap of 4.9 eV and high thermal and chemical stability when deposited directly on silicon.…”