Structural properties and electrical characteristics of Ho2O3 and HoTixOy gate dielectrics for a-InGaZnO thin-film transistors

Pan, Tung-Ming; Chen, Ching-Hung; Liu, Jiang-Hung

doi:10.1039/c4ra03556a

Cited by 17 publications

(13 citation statements)

References 34 publications

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“…The binding energy of pure Ho 4d is 161.8 eV. The chemical bonding of Ho–O or Ho–O–C–N makes it shift to 161.62 eV [ 35 , 36 ]. The C 1s spectra present three peaks at 282.59 eV, 283.79 eV, and 286.88 eV.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of Holmium-Oxide Nanoparticles for Near-Infrared Imaging and Dye-Photodegradation

Zhu

Shao

et al. 2022

Molecules

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The development of multifunctional nanomaterials has received growing research interest, thanks to its ability to combine multiple properties for severing highly demanding purposes. In this work, holmium oxide nanoparticles are synthesized and characterized by various tools including XRD, XPS, and TEM. These nanoparticles are found to emit near-infrared fluorescence (800–1100 nm) under a 785 nm excitation source. Imaging of the animal tissues was demonstrated, and the maximum imaging depth was found to be 2.2 cm. The synthesized nanoparticles also show the capability of facilitating dye (fluorescein sodium salt and rhodamine 6G) degradation under white light irradiation. The synthesized holmium oxide nanoparticles are envisioned to be useful for near-infrared tissue imaging and dye-degradation.

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Section: Resultsmentioning

confidence: 99%

Synthesis of Holmium-Oxide Nanoparticles for Near-Infrared Imaging and Dye-Photodegradation

Zhu

Shao

et al. 2022

Molecules

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“…19,20 To study whether the surface roughness was a major factor influencing the TFTs performance, the root-mean-square (RMS) roughness was obtained from atomic force microscopy analysis (AFM, not shown here To investigate how the ZrO x interlayer affect the total traps, the samples were characterized by high-angle annular dark-field (HAADF) STEM and EDS. The unit-area capacitance of AlO x and ZrO x /AlO x insulators was 38 nF/cm 2 and 36 6 nF/cm 2 , respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Generally, the smooth surface of the insulator is benecial for TFT performance. 19,20 To study whether the surface roughness was a major factor inuencing the TFTs performance, the root-mean-square (RMS) roughness was obtained from atomic force microscopy analysis (AFM, not shown here). The RMS values of AlO x and ZrO x /AlO x lms are 1.98 and 1.46 nm.…”

Section: Ssmentioning

confidence: 99%

Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide

Lan

Xiao

et al. 2015

RSC Adv.

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Solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs) based on anodized aluminum oxide gate insulator modified with a zirconium oxide (ZrO x ) interlayer were fabricated. By introduction of the ZrO x interlayer, the IZO-TFTs exhibited improved performance with a higher mobility of 7.8 cm 2 V −1 s −1 , a lower V th of 4.6 V and a lower SS of 0.21 V/dec compared to those without ZrO x interlayer. Comprehensive studies showed that the Al element easily diffuse into IZO film and formed AlO x clusters which acted as defects to deteriorate TFT performance; and after modified with a ZrO x interlayer, the diffusion of Al was suppressed and the Zr diffusing effect almost could be ignored. These results suggested that the introduction of an interlayer with less diffusing effect as well as having an effect of blocking the elements from gate insulator diffusing into the channel layer could be an effective way to improve the electrical performance for solution-processed oxide TFTs.

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“…The detail analysis of XPS spectrum and peak postition of 4d core level reveals that the Ho cation are resent in +3 oxidation states and matches with earlier literature. [22] The XPS study revails that the observed cationic oxidation state are Co 2+ , Mn 4+ and Ho 3+ in Ho 2 CoMnO 6 .…”

Section: X-ray Photo-electron Spectroscopy (Xps)mentioning

confidence: 85%

Physical properties in nano-crystalline Ho2CoMnO6

Bhatti

Bhatti²,

Mahato

et al. 2020

Ceramics International

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3d based double perovskite materials have received much attention in recent years due to their exotic magnetic structure and magneto-electric coupling. In this work we have prepared and studied the nano-crystalline sample of Ho 2 CoMnO 6 . Structural, magnetic, Raman and dielectric properties have been studied in detail. The structural analysis shows that the sample crystallize in monoclanic crystal structure with P2 1 /n phase group. The X-ray photoelectron spectroscopy have been employed to confirms the charge state of cations presents in the material. Magnetic study shows that the sample undergoes a paramagnetic to ferromagnetic phase transition around T c ∼85 K. The isothermal magnetization measurements shows hysteresis curve hence confirm ferromagnetic behavior at low temperature. Temperature dependent Raman study reveals that there is spin phonon coupling in the sample marked by deviation in phonon mode from anharmonic behavior. Dielectric response of Ho 2 CoMnO 6 shows the large dispersion and large dielectric constant. Impedance spectroscopy and electrical modulus study reveal that system shows deviation from ideal Debye model. AC conductivity have been studied as a function of both temperature and frequency. We found that the conduction mechanism is obeyed by Jonscher's model. The exponent factor n is suggest that the material deviates from ideal Debye model.

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Structural properties and electrical characteristics of Ho₂O₃ and HoTi_xO_y gate dielectrics for a-InGaZnO thin-film transistors

Abstract: Transfer and output characteristics of high-κ Ho2O3 and HoTixOy a-IGZO TFT devices.

Cited by 17 publications

References 34 publications

Synthesis of Holmium-Oxide Nanoparticles for Near-Infrared Imaging and Dye-Photodegradation

Synthesis of Holmium-Oxide Nanoparticles for Near-Infrared Imaging and Dye-Photodegradation

Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide

Physical properties in nano-crystalline Ho2CoMnO6

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