Structural properties and x-ray photoelectron spectroscopic study of SnO2 nanoparticles

Large Scaled Synthesis of Heterostructured Electrospun TiO2/SnO2Nanofibers with an Enhanced Photocatalytic Activity

“…It indicates the existence of crystal lattice oxygen (O Ti-O or O Sn-O ), hydroxyl groups (O OH ), and absorbed water. 23 Those results further confirmed that the TiO 2 /SnO 2 nanofibers consisted of TiO 2 and SnO 2 . Figure 6 shows the UV-vis diffuse reflectance spectra (DRS) of the TiO 2 , SnO 2 , and TiO 2 /SnO 2 nanofibers.…”

“…In Figure 5b, the peaks located at 486.2 and 494.6 eV were ascribed to the Sn 3d 5/2 and Sn 3d 3/2 of Sn 4+ , respectively. 23 23 Those results further confirmed that the TiO 2 /SnO 2 nanofibers consisted of TiO 2 and SnO 2 .…”

“…In Figure 5b, the peaks located at 486.2 and 494.6 eV were ascribed to the Sn 3d 5/2 and Sn 3d 3/2 of Sn 4+ , respectively. 23 Figure 5c presents the O 1s photoelectron peaks. The wide and asymmetric peak of the O 1s spectrum can be fitted with three Gaussian functions at 530.1, 530.9, and 532.5 eV, respectively.…”

Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition

“…The Wagner plot in Fig. a shows the obtained values of the Sn 3d 5/2 peaks and the Auger Sn M 4 N 45 N 45 peaks from our samples and the literature values of SnO 2 , SnO and Sn for comparison. The modified Auger parameters were obtained, which is the sum of the two energies of Sn 3d 5/2 line and Sn M 4 N 45 N 45 Auger line, as shown on the diagonal lines in Fig.…”

Preparation and Gas Sensing Property of SnO2/ZnO Composite Hetero-nanofibers Using Two-step Method

“…gas sensing mechanism 半导体金属氧化物自从 1962 年首次作为敏感 材料引入气体传感器领域以来, 便以响应迅速、精 度高、体积小和成本低廉等诸多优势得到广泛而深 入的研究和发展 [1] 。目前半导体金属氧化物不仅被 应用于低浓度的易燃 [2][3] 、易爆气体 [4][5] 、有毒有害 的挥发性有机气体的检测 [6][7][8][9] , 还被广泛用于化学 杀伤性武器-神经介子气 [10][11] 、人体呼吸气体的检 测 [12][13][14] 等。为了满足低浓度、高敏感度、选择性和 稳定性等诸多检测标准的提高, 越来越多的研究人 员希望改善决定半导体材料灵敏度和选择性的基本 功能性因素, 从根本上改善元件的气敏特性。归根 结底, 决定气敏元件的灵敏度和选择性的因素仍然 是敏感材料的基本属性: 如感知功能和传感功能, 敏感材料的粒径尺寸, 半导体的价位和 Debye 长度 以及元素的稳定性等基本属性 [15][16] 。N 型半导体感 知功能是靠表面的吸附氧含量来实现的, 而吸附氧 的含量也决定了其与目标气体作用时的灵敏度和选 择性 [15] 。敏感材料的粒径大小也是影响敏感材料气 敏性能的重要因素, 相同条件下, 粒径越小, 响应 值越高。改善元件气敏特性的方法是尽可能的增加 敏感材料表面吸附氧含量, 扩大敏感材料的比表面 积。提高敏感材料的表面活性也是增加表面吸附氧 含量的有效手段 [15,[17][18] 。 众所周知, N 型半导体的表面吸附氧会产生一 个耗尽电子层, 耗尽电子层的厚度与敏感材料晶界 势垒的高度一致取决于敏感材料表面吸附氧的含量 和 Debye 长度 [19] 。 两种 N 型半导体敏感材料在复合 过程中会产生 N-N 同型异质结, 不同势垒高度的两 种材料在复合过程中晶界势垒通过电子和空穴的转 移而达到一种新的平衡。这种新的平衡过程会改变 吸附氧的含量, 增加敏感材料吸附氧的含量, 从而 改善气敏感元件的敏感特性 [20][21][22] [26][27]…”