Structural properties of a thallium-induced Si(111)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn></mml:math>surface

Kim, N. D.; Hwang, Choongyu; Chung, J. W.; Kim, T. C.; Kim, H. J.; Noh, Do Young

doi:10.1103/physrevb.69.195311

Cited by 42 publications

(25 citation statements)

References 16 publications

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“…3 indicates that the valence state of Tl is identical in the coverage range investigated in the present study. Therefore, based on the valence state of Tl on the ͑1 ϫ 1͒ surface reported in previous studies, 16,18 we conclude that the valence state of Tl is 1+ and thus the 6s 2 electrons of Tl are inactive as an inert pair in the Tl-Si bonding on a Si͑111͒ surface at coverages up to 1 ML. The core-level result is not consistent with the variable valency of Tl on Si͑111͒ proposed in the literature.…”

Section: Methodsmentioning

confidence: 99%

“…1͑b͒, and the 6s 2 electrons of Tl have been reported to be inactive as an inert pair in the Tl-Si bonding. 16,18 This means that Tl behaves as a monovalent atom on the ͑1 ϫ 1͒ surface. Together with the well-ordered ͑1 ϫ 1͒ surface, small ͑3 ϫ 1͒ and ͑ ͱ 3 ϫ ͱ 3͒ domains have been observed using scanning tunneling microscopy ͑STM͒ depending on the adsorption conditions.…”

Section: Introductionmentioning

confidence: 99%

“…[13][14][15][16][17][18] This phase has not been observed by the adsorption of other group III metals. On the ͑1 ϫ 1͒ surface, Tl atoms are adsorbed on the T 4 sites of the bulk terminated unreconstructed Si͑111͒ surface [16][17][18] as shown in Fig. 1͑b͒, and the 6s 2 electrons of Tl have been reported to be inactive as an inert pair in the Tl-Si bonding.…”

Section: Introductionmentioning

confidence: 99%

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Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

et al. 2006

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, Core-level photoemission study of thallium adsorbed on a Si (111) The coverage-dependent valence state of Tl adsorbed on a Si͑111͒-͑7 ϫ 7͒ surface and the coverage dependence of the charge states of surface Si atoms have been investigated by high-resolution core-level photoelectron spectroscopy. Although two different reconstructions were observed in low-energy electron diffraction at different coverages, a ͑1 ϫ 1͒ pattern at a Tl coverage of 1 monolayer ͑ML͒ and a ͑ ͱ 3 ϫ ͱ 3͒ pattern at a coverage of 1 / 3 ML, the binding energy of the Tl 5d core-level was the same at Tl coverages up to 1 ML. Taking the valence state on a ͑1 ϫ 1͒ surface reported in the literature into account, we conclude that the valence state of Tl is 1+, and that the 6s 2 electrons of Tl are inactive as an inert pair in the Tl-Si bonding on a Si͑111͒ surface at a coverage of 1 ML and below. In the Si 2p core-level spectra, one surface component was observed on the ͑1 ϫ 1͒ surface, and three surface components were observed on the ͑ ͱ 3 ϫ ͱ 3͒ surface. The binding energies and intensities of the Si 2p surface components indicate that the charge state of the surface Si atoms on Tl/ Si͑111͒-͑1 ϫ 1͒ is the same as that of the ͑ ͱ 3 ϫ ͱ 3͒ surfaces induced by the other group III metals, but they are different on the Tl/ Si͑111͒-͑ ͱ 3 ϫ ͱ 3͒ surface.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

et al. 2006

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“…Так, на поверхности с реконструкцией Si(111)1 × 1−Tl было обнаружено " гигантское" спиновое расщепление поверхностных состояний [1], а в двумерной системе Si(111)6 × 6−Tl наблюдалась сверхпроводимость с температурой перехода 0.96 K [2]. Как известно, реконструкция Si(111)1 × 1−Tl формируется атомами таллия, которые находятся в позиции T 4 на поверхности чистого кремния [3,4], и является полупро-водниковой [4,5]. Покрытие таллия в этой фазе составляет 1 монослой (ML) (для поверхности Si(111) 1 ML = 7.83 · 10 14 cm −2 ) [3,5].…”

Section: поступило в редакцию 19 января 2018 гunclassified

“…Как известно, реконструкция Si(111)1 × 1−Tl формируется атомами таллия, которые находятся в позиции T 4 на поверхности чистого кремния [3,4], и является полупро-водниковой [4,5]. Покрытие таллия в этой фазе составляет 1 монослой (ML) (для поверхности Si(111) 1 ML = 7.83 · 10 14 cm −2 ) [3,5]. Известно также, что поверхностная реконструкция Si(111)6 × 6−Tl представляет собой двойной слой с общим покрытием таллия 2.4 ML (по 1.2 ML в каждом слое) [6].…”

Section: поступило в редакцию 19 января 2018 гunclassified

Исследование поверхностной проводимости двойного слоя таллия на Si(111) после адсорбции лития и рубидия

Ryzhkova¹,

Borisenko²,

Ivanchenko³

et al. 2018

Письма В Журнал Технической Физики

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Changes in the state of a thallium bilayer on Si(111) substrate, Si(111)6 × 6–Tl, after adsorption of lithium and rubidium were studied using low-energy electron-diffraction and four-point probe-conductivity measurements. New surface reconstructions 5 × 1 and $$5\sqrt 3 \times 5\sqrt 3 $$ 5 3 × 5 3 were observed after the adsorption of lithium, and 2 × 2 and $$\sqrt 3 \times \sqrt 3 $$ 3 × 3 reconstructions appeared after the adsorption of rubidium. The surface conductivity of silicon substrates was studied as a function of the dose of deposited adsorbate. It is established that the formation of both 5 × 1 and 2 × 2 reconstructions retains the conducting properties of a two-dimensional channel constituted by the thallium bilayer.

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Ab initio study of Tl on Si(111)-(3×1) surface

Özkaya

Çakmak

Alkan

2014

Phys. Status Solidi B

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The surface reconstruction, (3×1), induced by Tl adsorption on a Si(111) surface has been studied using first‐principles density‐functional calculations within the generalized gradient approximation. Three different possible adsorption sites have been considered: 1/3 monolayer (ML) of Tl on the Si(111)‐(3×1) surface with (i) a T4 site (directly above a second‐layer Si atom), (ii) an H3 site (this site is directly above a fourth‐layer Si atom), and 2/3 ML of Tl adsorption on this surface in (iii) a T4–H3 site (one Tl atom on a T4 site and the following one on an H3 site). It is calculated that the T4–H3 site is more favorable than the other two. The stability of the Tl/Si(111)‐(3×1) surface can be related to the amount of the Tl coverage and Si=Si double bond. We also present the electronic band structures for the T4–H3 site as well as the corresponding charge‐density plots.

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Structural properties of a thallium-induced Si(111)-1×1surface

Cited by 42 publications

References 16 publications

Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

Исследование поверхностной проводимости двойного слоя таллия на Si(111) после адсорбции лития и рубидия

Ab initio study of Tl on Si(111)-(3×1) surface

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