Structural properties of cadmium selenide nanowires prepared by chemical bath deposition for the electrical and photosensitive characteristics of the p-Si/CdSe heterojunction

Photoelectrochemical Properties and Characterization of CdS/CdSe Heterojunctions Obtained by CBD on ITO and p–Si Substrates

“…It is clearly visible from Figure 3 (a) that nanowires (NWs) and spherical nanoparticles (NPs) were formed. These NWs are attributed to the CdSe semiconductor compound, as mentioned in our prior studies [10,17,21–23] . Figure 3 (b) demonstrates an image of these nanowires (NWs) at a magnification of 100 000×, along with an inset image at 50 000× magnification.…”

“…This was followed by a second step, called oxide stripping, in which a thin layer of silicon dioxide was removed with an HF: H 2 O (1 : 10) solution. The final step involved an ionic cleaning procedure executed by immersing the wafer in an HCI+H 2 O 2 +6H 2 O solution for 10 minutes [23] . Subsequently, the drying process was carried out using an air dryer.…”

“…The final step involved an ionic cleaning procedure executed by immersing the wafer in an HCI + H 2 O 2 + 6H 2 O solution for 10 minutes. [23] Subsequently, the drying process was carried out using an air dryer. hour period, and solutions were renewed after each cycle, accumulating to a total deposition time of 10 hours, followed by the cleaning of the films.…”

“…These NWs are attributed to the CdSe semiconductor compound, as mentioned in our prior studies. [10,17,[21][22][23] Figure 3 (b) demonstrates an image of these nanowires (NWs) at a magnification of 100 000×, along with an inset image at 50 000× magnification. By measurements taken on several nanowires, the diameters of NWs were determined in the range of 124 nm to 236 nm.…”

“…We have employed the CBD technique in our lab to produce thin films of CdS, [16] CdSe, [17] ZnS, [18] ZnSe, [19] SnS, [20] and CdS/CdSe [10] . Moreover, CdSe was obtained as a nanowire (NW) structure using the CBD method on various substrates [17,21–23] . This study focused on a comprehensive investigation of the structural, optical, electrical, and photoelectrochemical properties of the CdS/CdSe heterojunctions produced on indium doped tin oxide (ITO) coated glass and p–Si substrates.…”