Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering

Shon, Jeong Woo; Ohta, Jitsuo; Ueno, K.; Kobayashi, Atsushi; Fujioka, Hiroshi

doi:10.7567/apex.7.085502

Cited by 32 publications

(26 citation statements)

References 27 publications

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“…The detailed growth conditions are described elsewhere. 13,16,18 The film surfaces were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and Al Kα X-ray photoelectron spectroscopy (XPS). The sharpness of the heterointerfaces between GaN and Hf was investigated using X-ray reflectivity (XRR).…”

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confidence: 99%

Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique

et al. 2016

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We demonstrated epitaxial growth of GaN (0001) films on nearly lattice-matched Hf (0001) substrates by using a low-temperature (LT) epitaxial growth technique. High-temperature growth of GaN films results in the formation of polycrystalline films due to significant reaction at GaN/Hf heterointerfaces, while LT-growth allowed us to suppress the interfacial reactions and to obtain epitaxial GaN films on Hf substrates with a GaN112̄0//Hf112̄0 in-plane orientation. LT-grown GaN films can act as buffer layers for GaN growth at high temperatures. The interfacial layer thickness at the LT-GaN/Hf heterointerface was as small as 1 nm, and the sharpness of the contact remained unchanged even after annealing up to approximately 700 °C, which likely accounts for the dramatic improvement in GaN crystalline quality on Hf substrates.

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Section: -mentioning

confidence: 99%

Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique

et al. 2016

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“…Fabrication of high‐performance GaN devices such as LEDs and transistors requires a technique allowing to control the GaN polarity. It has been recently reported that GaN growth on a surface‐oxidized AlN layer resulted in the formation of Ga‐polar GaN . Herein, AlN interlayers were introduced on the HfN layers and subsequently surface‐oxidized by annealing under air at 200 °C.…”

Section: Resultsmentioning

confidence: 99%

Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition

Kim

Ohta

Ueno

et al. 2017

Physica Status Solidi (a)

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Phone: þ81 3 5452 6342, Fax: þ81 3 5452 6342GaN films were grown on nearly lattice-matched Hf foils by pulsed sputtering deposition (PSD) which showed highly c-axis oriented structures. Unlike GaN films directly grown on Hf foils that showed coexisting zinc blende and wurtzite phases, as a result of interfacial reactions the insertion of HfN reaction barrier layers between GaN and Hf suppressed the inclusion of the zinc blende phase. The utilization of surface-oxidized AlN interlayers resulted in GaN films on Hf foils with controlled polarity (i.e., Ga-polar). The residual carrier concentration in the Ga-polar GaN films was as low as 3.2 Â 10 16 cm À3 . These results revealed that the proposed technique can yield high-quality Ga-polar GaN films on Hf foils that can be potentially used in large-area and flexible GaN-based optical devices.

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“…Further, GaN, InGaN, and AlN films were grown by PSD. The detailed growth conditions are described elsewhere [3], [4]. The grown films were characterized by X-ray diffraction (XRD) using a Bruker D8 diffractometer and by electron backscatter diffraction (EBSD) using an INCA Crystal EBSD system (Oxford Instruments).…”

Section: Growth and Characterization Of Gan Filmsmentioning

confidence: 99%

GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

Ohta

Shon

Ueno

et al. 2017

IEICE Trans. Electron.

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SUMMARYCrystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axisoriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present technique is promising for future large-area light-emitting displays on amorphous substrates.

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Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering

Cited by 32 publications

References 27 publications

Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique

Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique

Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition

GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

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