2023
DOI: 10.1088/2633-4356/aced32
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Structural properties of graded In x Ga 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands

Abstract: In recent years, there has been a significant increase in interest in tuning the emission wavelength of InAs quantum dots (QDs) to wavelengths compatible with the already existing silica fiber networks. In this work, we develop and explore compositionally graded InxGa1-xAs metamorphic buffer layers (MBLs), with lattice constant carefully tailored to tune the emission wavelengths of InAs QDs towards the telecom O-band. The designed heterostructure is grown by molecular beam epitaxy (MBE), where a single layer o… Show more

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