Structural properties of porous 6H silicon carbide

Abstract

In this work we have studied the effect of current density and UV illumination on the morphology of porous SiC formed by electrochemical etching. Raman spectroscopy was also carried out, in order to correlate the porous SiC structure with the obtained spectra. We show that current density is important in controlling the type of structure, whereas UV illumination plays a role in pore nucleation at lower current densities. The shape of the Raman spectra, in particular the longitudinal optical (LO) peak, also depends strongly on the SiC nanoscale morphology. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Electrochemical Synthesis of Carbon Fluorooxide Nanoparticles from 3C-SiC Substrates

“…The first two signals are related to ethoxyl protons while the signal at 6.5 ppm corresponds to protons of the -CO 2 H groups as well as some aromatic protons. 13 C NMR spectrum of the CFO (Fig. 9) demonstrates the same tendencies as the 1 H NMR one.…”

“…1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 23 the signals at 53.0 and 39.4 ppm is ambiguous and will be discussed below. 13 C MAS NMR spectrum of CFO (Fig. S9) demonstrates the same signals as the solution spectrum.…”

“…13 C NMR spectrum (proton-decoupled) of CFO dissolved in CD 3 OD 19. F MAS NMR spectra of the initial CFO and the CFO_hydr samples are shown inFig.…”

Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films

“…3. This indicates that the small triangular pores in the top layer is the initial stage of the dendritic pore structures [27]. As the porous layer became thicker, the formed SiO 2 in deep layer could not be dissolved efficiently, which could block the vertical etching.…”

Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

“…In this work, we discuss the anodic etching of highly doped (0.03 ohm.cm) n-type 4 H-SiC without any UV lighting contrary to most of the experiments that have been done until now [7,8]. In particular, we explore the morphology differences after etching of Si or C faces.…”