Structural Properties of Tensile-Strained Si Layers Grown on Si_0.6Ge_0.4 and Si_0.5Ge_0.5 Virtual Substrates

Abstract

We have studied the structural properties of tensile strained Si (sSi) layers grown on polished Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates as a function of their thickness. The surface morphology, the tensile strain, the linear density of defects, and the threading dislocation density have been quantified for different growth conditions and sSi layer thickness.

A Review of Different and Promising Defect Etching Techniques: from Si to Ge

“…The mechanism is shown Figure 13. Br 2 (aq) + 2e-↔ Br -E o (Br 2 /Br -) = 1.08 [6] For safety and handling reasons, it has been replaced in the solution by salts of bromate and bromide. In acid solutions, bromate and bromide generate bromine according to equation [7]:…”

“…In this study, Leti SiGe samples with different Ge concentrations (from 20% up to pure Ge) were chosen because of their known and well-calibrated defect densities, allowing a reliable comparison between the different techniques (5). Several techniques such as Electron Beam Induced Current (EBIC) or cathodoluminescence can be used to evaluate dislocations densities in relaxed SiGe (6). We have focused in this paper on wet-chemical solutions, in particular, diluted Schimmel ((CrO 3 -H 2 O)/HF), diluted Secco ((K 2 Cr 2 O 7 -H 2 O)/HF) and a homemade Crfree solution.…”

Structural Properties of Tensile-Strained Si Layers Grown on Si1-xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)

“…We have recently reported the properties of tensile-strained Si (sSi) layers deposited on top of Si 0.6 Ge 0.4 and Si 0.5 Ge 0.5 Virtual Substrates (VS) (1). We expand here this study by focusing on the specifics of sSi layers grown on top of polished Si 0.8 Ge 0.2 and Si 0.7 Ge 0.3 VS.…”