Structural reliability evaluation of low-k nanoporous dielectric interlayers integrated into microelectronic devices

Heo, Kyuyoung; Ree, Brian J.; Choi, Kyeung-Keun; Ree, Moonhor

doi:10.1039/c5ra16983f

Cited by 6 publications

(1 citation statement)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Aluminum foil pieces were applied as a semitransparent beam stop because the intensity of the specular reflection from the substrate was much stronger than the scattering intensity of the polymer films near the critical angle. Specular X-ray reflectivity (XR) analysis was additionally carried out for films of the homopolymers at the 3D beamline of PLS-II. XR measurements were conducted using a four-circle goniometer (Huber, Rimsting, Germany) equipped with a scintillation counter with an enhanced dynamic range (EDR, Bede Scientific, Cheshire, England) and an X-ray source with λ = 0.1540 nm.…”

Section: Experimental Sectionmentioning

confidence: 99%

Hierarchical Self-Assembly and Digital Memory Characteristics of Crystalline–Amorphous Brush Diblock Copolymers Bearing Electroactive Moieties

Jung

Kwon

et al. 2016

Macromolecules

Self Cite

View full text Add to dashboard Cite

Two series of crystalline−amorphous brush diblock copolymers bearing electroactive moieties were newly synthesized by sequential anionic ring-opening copolymerizations of glycidyl derivatives and subsequent selective postfunctionalizations; their homopolymers and analogues were additionally synthesized. Self-assembly structural details and electrical memory behaviors of these polymers in nanoscale thin films were investigated. The diblock copolymers revealed complex hierarchical self-assembly structures depending on the compositions. The self-assembly structure and orientation of the crystalline block chains were severely affected by the geometrical confinement (i.e., size and shape) stemming from microphase separation. Such film morphologies were found to significantly influence the electrical properties; they exhibited electrical properties from p-type permanent memory behavior to dielectric-like behavior. The memory behaviors were governed by the trap-limited space charge limited conduction mechanism combined with ohmic conduction and the hopping paths composed of the electroactive moieties distributed locally.

show abstract

Section: Experimental Sectionmentioning

confidence: 99%

Hierarchical Self-Assembly and Digital Memory Characteristics of Crystalline–Amorphous Brush Diblock Copolymers Bearing Electroactive Moieties

Jung

Kwon

et al. 2016

Macromolecules

Self Cite

View full text Add to dashboard Cite

show abstract

Poly(arylene ether ketone)s with low dielectric constants derived from polyhedral oligomeric silsesquioxane and difluorinated aromatic ketones

Hao

Wei

et al. 2017

J of Applied Polymer Sci

View full text Add to dashboard Cite

Preparation of low-dielectric-constant poly(arylene ether ketone)s (PAEKs) containing polyhedral oligomeric silsesquioxane (POSS) in the main chains with high molecular weights (up to h inh 5 0.65 dL/g) is reported. The polymers (DDSQ-PAEKs) were synthesized from a diphenol POSS [2OH-DDSQ, or 3,13-di(2-methoxy-4-propylphenol)octaphenyl DDSQ] and three difluorinated aromatic ketones via nucleophilic aromatic substitution polycondensation. All of the DDSQ-PAEKs exhibited lower dielectric constants in the range of 1.95-2.21 at 1 MHz at room temperature compared with the corresponding traditional PAEKs. In particular, DDSQ-PEEK demonstrated good combined characteristics, including low dielectric constant of 1.95 at 1 MHz, high static water contact angle (CA) of 1008, low water sorption of 0.09%, and organosolubility. The relationship between chemical structure and the properties of the DDSQ-PAEKs were investigated in detail.

show abstract

High-performance and low-dielectric cyanate ester resin optimized by regulating the structure of linear polyhydroxy ether modifier

Zhou

Zhang

Wang

et al. 2022

Composites Part A: Applied Science and Manufacturing

View full text Add to dashboard Cite

Structural reliability evaluation of low-k nanoporous dielectric interlayers integrated into microelectronic devices

Abstract: Structural reliability assessment on the integration of low-k nanoporous dielectrics into a multilayer structure, involving capping, chemical mechanical polishing, post-cleaning, and thermal annealing processes, was successfully demonstrated in a nondestructive manner.

Cited by 6 publications

References 27 publications

Hierarchical Self-Assembly and Digital Memory Characteristics of Crystalline–Amorphous Brush Diblock Copolymers Bearing Electroactive Moieties

Hierarchical Self-Assembly and Digital Memory Characteristics of Crystalline–Amorphous Brush Diblock Copolymers Bearing Electroactive Moieties

Poly(arylene ether ketone)s with low dielectric constants derived from polyhedral oligomeric silsesquioxane and difluorinated aromatic ketones

High-performance and low-dielectric cyanate ester resin optimized by regulating the structure of linear polyhydroxy ether modifier

Contact Info

Product

Resources

About