Structural response and stress release of hexagonal and cubic boron nitride films due to the bombardment with 170-MeV iodine ions

Widmayer, P.; Schwertberger, D.; Wenig, Micaela; Ziemann, P.; Bergmaier, A.; Dollinger, G.

doi:10.1016/s0925-9635(98)00219-2

Cited by 11 publications

(4 citation statements)

References 25 publications

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“…These various forms of BN are of great technological interest because of their demonstrated tribological, high-temperature, thermally conducting, electrically insulating, and wide-bandgap semiconductor properties. 2, 3,4 As this discussion illustrates, all of these forms have direct analogy to the more wellknown carbon phases: diamond, graphite, and wurtzitic diamond (generally loosely referred to as hexagonal diamond). 5,6 Unfortunately, much like diamond films, the synthesis of crystalline BN films is still in its early stages of development.…”

Section: Introductionmentioning

confidence: 98%

The formation of epitaxial hexagonal boron nitride on nickel substrates

Yang

Prater²,

Liu

et al. 2005

Journal of Elec Materi

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The various crystallographic forms of boron nitride (BN) are of great technological interest because of their demonstrated tribological, high-temperature, thermally conducting, electrically insulating, and wide-bandgap semiconductor properties. Unfortunately, the synthesis of crystalline BN films is still in the early stages of development. Furthermore, although polycrystalline BN films have been prepared by a variety of physical and chemical vapor deposition techniques, the capability does not currently exist for depositing large area single-crystal or oriented films of BN. Such single-crystal films are required for many applications of interest, especially in electronics. The present paper reports on a new approach to the oriented growth of boron nitride using a novel molten layer epitaxy technique. Well-oriented hexagonal boron nitride (h-BN) crystals were obtained with highly faceted crystal shapes. The h-BN was formed via precipitation from a molten, hydrogen-saturated Ni surface layer. Solid cubic BN was utilized as the source material and was dissolved into the substrate surface during a brief high-temperature anneal. It was found that surface melting occurred during this process and the B diffused into the Ni substrate, whereas the N was expelled into the growth chamber. Oriented BN was then precipitated as the surface layer was allowed to resolidify.

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Section: Introductionmentioning

confidence: 98%

The formation of epitaxial hexagonal boron nitride on nickel substrates

Yang

Prater²,

Liu

et al. 2005

Journal of Elec Materi

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“…Considerable effort was made to maximize the thickness of cBN films via stress reduction using a two-step growth, deposition at elevated temperatures (≥900 °C), postdeposition annealing, and postdeposition high-energy ion irradiation …”

Section: Introductionmentioning

confidence: 99%

Studying the Growth of Cubic Boron Nitride on Amorphous Tetrahedral Carbon Interlayers

et al. 2005

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The growth of cubic boron nitride (cBN) films on bare silicon and amorphous tetrahedral carbon (ta-C) layers prepared on silicon substrates was studied. The cBN films were prepared by radio frequency magnetron sputter deposition at approximately 870 degrees C. The original ta-C interlayers were graphitized and restructured under high temperature and possibly under ion bombardment during BN deposition. The majority of graphitic basal planes were nearly perpendicular to the surface of silicon substrates. The BN films grown on these restructured carbon layers were deposited with higher content of cubic phase and did not show delamination signs. Turbostratic BN (tBN) basal planes extended carbon basal planes and their edges served as cBN nucleation sites. The cBN films grown on textured ta-C interlayers were insensitive to the ambient environment. The residual sp(3)-bonded carbon phase confined in the interlayers probably acts as a diffusion barrier preventing the oxidation of dangling bonds near BN interface and thus precludes weakening the interface as a result of volume expansion. The carbon interlayers also improve the crystallinity of the oriented tBN because they are continuation of carbon graphitic basal planes so that the volume fraction of nitrogen-void (N-void) defects in the sp(2)-bonded BN intermediate layers is reduced. The strong sp(3)-bonded carbon matrix could thereto withstand large compressive stress and facilitates deposition of thicker cBN films.

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“…The basic idea is to take advantage of sequential ion-induced stress relaxation and growth of thin c-BN layers, which are stacked on top of each other to form a film with a total thickness in the desired range. Stress relief of the individual layers is achieved by means of 300 keV Ar ϩ ion bombardment which, in contrast to high-energy ion irradiation ͑170 MeV͒, 12 does not lead to an immediate transformation from cubic into the hexagonal phase. 7 This previous work, however, also revealed that for high ion fluences such a transformation does occur.…”

Section: Sequential Ion-induced Stress Relaxation and Growth: A Way Tmentioning

confidence: 99%

Sequential ion-induced stress relaxation and growth: A way to prepare stress-relieved thick films of cubic boron nitride

Boyen

Widmayer

Schwertberger

et al. 2000

Applied Physics Letters

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Articles you may be interested inBinary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films Appl. Phys. Lett. 90, 181910 (2007); 10.1063/1.2734472 X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment Appl. Phys. Lett. 85, 5905 (2004); 10.1063/1.1836868Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation Dual ion beam deposited boron-rich boron nitride films

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Structural response and stress release of hexagonal and cubic boron nitride films due to the bombardment with 170-MeV iodine ions

Cited by 11 publications

References 25 publications

The formation of epitaxial hexagonal boron nitride on nickel substrates

The formation of epitaxial hexagonal boron nitride on nickel substrates

Studying the Growth of Cubic Boron Nitride on Amorphous Tetrahedral Carbon Interlayers

Sequential ion-induced stress relaxation and growth: A way to prepare stress-relieved thick films of cubic boron nitride

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