2018
DOI: 10.1016/j.ceramint.2018.02.189
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Structural stability, electronic structures and enhanced photocatalytic properties of BiF3 nanowires: A first-principles study

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Cited by 5 publications
(3 citation statements)
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“…Differing from 3D FAPbI 3 , the band structure of 1D FAI QWs and PbI-QWs both exhibit bands with the Fermi level crossing the conduction band minimum (CBM) of ∼0.03 eV. This is can be compensated via large unit cell or the hydrogen passivate dangling bonds. , This Fermi level crossing-band effects have also been observed in BiF 3 . Experimentally, the hexagonal phase FAPbI 3 is an indirect bandgap semiconductor with a nonperovskite type structure, which is not suitable for photovoltaic and light-emitting applications. ,, Moreover, as the 1D structure of FAPbI 3 QWs includes two octahedra in diameter, the electronic structures and properties will be significantly different from the MAPbI 3 QWs (500 nm) that can be achieved experimentally .…”
Section: Resultsmentioning
confidence: 99%
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“…Differing from 3D FAPbI 3 , the band structure of 1D FAI QWs and PbI-QWs both exhibit bands with the Fermi level crossing the conduction band minimum (CBM) of ∼0.03 eV. This is can be compensated via large unit cell or the hydrogen passivate dangling bonds. , This Fermi level crossing-band effects have also been observed in BiF 3 . Experimentally, the hexagonal phase FAPbI 3 is an indirect bandgap semiconductor with a nonperovskite type structure, which is not suitable for photovoltaic and light-emitting applications. ,, Moreover, as the 1D structure of FAPbI 3 QWs includes two octahedra in diameter, the electronic structures and properties will be significantly different from the MAPbI 3 QWs (500 nm) that can be achieved experimentally .…”
Section: Resultsmentioning
confidence: 99%
“…64,65 This Fermi level crossing-band effects have also been observed in BiF 3 . 66 Experimentally, the hexagonal phase FAPbI 3 is an indirect bandgap semiconductor with a nonperovskite type structure, which is not suitable for photovoltaic and light-emitting applications. 23,33,47 Moreover, as the 1D structure of FAPbI 3 QWs includes two octahedra in diameter, the electronic structures and properties will be significantly different from the MAPbI 3 QWs (500 nm) that can be achieved experimentally.…”
Section: ■ Methodsmentioning
confidence: 99%
“…Bismuth-containing crystals (such as bismuth, bismuth trifluoride, bismuth oxyfluoride, and so on) have shown promising applications in the fields of fluoride shuttle batteries, photocatalysis, quantum electronics, and luminescent materials, due to their low cost, convenient use, and easy preparation. [27][28][29][30][31][32][33][34][35] Currently, mono-or few-layered bismuth-containing (Bi-containing) nanosheets are mainly prepared by conventional top-down approaches (such as mechanical exfoliation bulk Bi-containing crystals) or bottom-up approaches (such as physical vapor deposition (PVD)). [33,34,[36][37][38][39][40][41][42][43] However, the preparation of Bi-containing crystal with a 2D structure at ambient conditions is a great challenge.…”
Section: Influence Of Graphene Oxide Surface On the Synthesis And Str...mentioning
confidence: 99%